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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	... dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derat...limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS =...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	... dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derat...limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS ...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SQ4961EY SQ4940AEY SQ4949EY SQ4182EY SQ4050EY SQ4850EY SQ9407EY SQ9945BEY
OCR Text	...tage v gs 20 continuous drain current t c = 25 c i d - 10.8 a t c = 125 c - 6.2 continuous source curre nt (diode conduction) i s - 5....limited by 100 ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 b v dss limited i dm limited 10 -3 10 -2 0 0 ...
Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET
File Size	204.71K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SQ4940AEY
OCR Text	...tage v gs 20 continuous drain current t c = 25 c a i d 8 a t c = 125 c 5.3 continuous source curre nt (diode conduction) i s 3.6 pulse...limited by r d s ( on ) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 1...
Description	Automotive Dual N-Channel 40 V (D-S) MOSFET
File Size	250.21K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SQ4949EY-15
OCR Text	...tage v gs 20 continuous drain current t c = 25 c i d - 7.5 a t c = 125 c - 4.3 continuous source curr ent (diode conduction) i s - 3 p...limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 ...
Description	Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
File Size	271.54K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFH8201TRPBF
OCR Text	... @ t a = 25c continuous drain current, v gs @ 10v 49 i d @ t c (bottom) = 25c continuous drain current, v gs @ 10v 324 ?? i d ...limited) 100 ? i dm pulsed drain current 700 ? p d @t a = 25c power dissipation ? 3.6 ...
Description	25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
File Size	459.63K / 8 Page	View it Online	Download Datasheet

				ROHM
Part No.	RB050L-40TE25
OCR Text	... 2 - - 0.50 v i f =1.5a reverse current i r --1m a v r =40v reverse voltage (dc) 40 average rectified forward current 3 parameter limits rev...limited to fail-safe desi gn against the physical injury, damage to any property, which a failure o...
Description	Schottky Barrier Diode
File Size	149.39K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...A AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 T...limited by safe operating area IRF530/FI THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink ...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	... ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING...limited by safe operating area March 1998 1/5 IRF530FP THERMAL DATA R thj-case R thj-amb ...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

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