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KBPC1500 CS8156 2N4996 CS8156 XF0306AB CW080 TRRPB MB1505
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    Maxim Integrated Products, Inc.
Part No. MAX5130AEEE MAX5130BEEE MAX5131AEEE MAX5131BEEE
OCR Text ...with an internal precision ref- erence of +1.25v. both devices draw only 500? of sup- ply current, which reduces to 3
Description 3V/ 5V / 13-Bit / Serial Voltage-Output DACs with Internal Reference
3V/ 5V, 13-Bit, Serial Voltage-Output DACs with Internal Reference SERIAL INPUT LOADING, 20 us SETTLING TIME, 13-BIT DAC, PDSO16

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    MAX5130

Maxim Integrated Products
Part No. MAX5130
OCR Text ...with an internal precision ref- erence of +1.25v. both devices draw only 500? of sup- ply current, which reduces to 3
Description (MAX5130 / MAX5131) Voltage-output DACs

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    Analog Devices, Inc.
Part No. AD9201-EVAL AD9201ARS
OCR Text ...log supply 24 refb-q bottom ref erence decoupling, q channel 25 reft-q top reference decoupling, q channel 26 inb-q q channel, b input 27 ina-q q channel, a input 28 chip-select hi-high impedance, lo-normal operation warning! esd sensitiv...
Description Dual Channel/ 20 MHz 10-Bit Resolution CMOS ADC
Dual Channel, 20 MHz 10-Bit Resolution CMOS ADC 双通道0 MHz0位分辨率的CMOS模数转换
Dual Channel, 20 MHz 10-Bit Resolution CMOS ADC 双通道20 MHz0位分辨率的CMOS模数转换

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    AN-780

Fairchild Semiconductor
Part No. AN-780
OCR Text ...d plane as the primary ecl ref- erence, when mixing ttl (or other noisy circuitry) into ecl systems, the recommendation is to reference the ttl to a separate ground plane. this is to keep the high transient ttl switching energy out of the p...
Description Operating ECL from a Single Positive Supply

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    IBM Microeletronics
International Business Machines, Corp.
Part No. IBM0116405P IBM0116405B
OCR Text ...litude measured peak to dc ref- erence. capacitance (t a = 25 c, v cc = 3.3v 0.3v or v cc = 5.0v 0.5v) symbol parameter min. max. units notes c i1 input capacitance (a0 - a11) 5 pf 1 c i2 input capacitance ( ras, cas, we, oe) 7 pf 1 c...
Description 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)
4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)

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    ST Microelectronics
Part No. CLP270M-TR
OCR Text ...or lcdp1511d ov v ref er oltage erence (+/- 270 v) overvoltage detector overcurrent detector or overvoltage reference (+/- 270 v) overvoltage detector overcurrent detector or tipl tips ringl fs gnd sw3 sw1 sw4 sw2 rsense rp ring generator f...
Description OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
http://
Part No. M5M5V416WG-70LI M5M5V416BWG M5M5V416BWG-10H M5M5V416BWG-10HI M5M5V416BWG-10HW M5M5V416BWG-10L M5M5V416BWG-10LI M5M5V416BWG-10LW M5M5V416BWG-70H M5M5V416BWG-70HI M5M5V416BWG-70HW M5M5V416BWG-70L M5M5V416BWG-70LW M5M5V416BWG-85H M5M5V416BWG-85HI M5M5V416BWG-85HW M5M5V416BWG-85L M5M5V416BWG-85LI M5M5V416BWG-85LW M5M5V416BWG-70LI
OCR Text ...se time and f all time 5ns Ref erence lev el 1TTL DQ CL Including scope and jig capacitance VOH=VOL=1.5V Transition is measured 500mV f rom steady state voltage.(f or ten,t dis) Output loads Fig.1,CL=30pF CL=5pF (for ten,tdis...
Description 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M5V416BUG-70HI
OCR Text ...se time and f all time 5ns Ref erence lev el 1TTL DQ CL Including scope and jig capacitance VOH=VOL=1.5V Transition is measured 500mV f rom steady state voltage.(f or ten,t dis) Output loads Fig.1,CL=30pF CL=5pF (for ten,tdis...
Description 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

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    STMICROELECTRONICS[STMicroelectronics]
Part No. L9903
OCR Text ...P ST 1 + =V STH Ref erence BIAS VCC Charge pump 11 13 CP CB1 GH1 f ST 12 VCC Ov ervoltage Undervoltage Thermal shutdown 14 RDG S1 DG 2 Control Logic V S1TH = R S1 EN 4 REN 1...
Description MOTOR BRIDGE CONTROLLER

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