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For g-case Found Datasheets File :: 115418 Search Time::6.625ms
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				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	...unted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Not...Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Te...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...unted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Not...Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Te...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...ons D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 2...Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	... VDSS = 100V RDS(on) = 0.025 G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Ca...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	... VDSS = 100V RDS(on) = 23m G S ID = 57A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanc...case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS ...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...tions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 30A, V GS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C,...Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr ...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	... Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, this HEXFE...case ) 10 lbfyin (1.1Nym) Thermal Resistance RJC RCS RJA RJA Soldering Temperature, for 10 se...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...its q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Ad...case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...its q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 140AV Description Designed specifically for Automotive applications, this Ad...case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC R...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Ca...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

For g-case Found Datasheets File :: 115418 Search Time::6.625ms
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