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  ge-avalanche Datasheet PDF File

For ge-avalanche Found Datasheets File :: 1490    Search Time::1.234ms    
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    IRFBA22N50A IRFBA22N50

IRF[International Rectifier]
Part No. IRFBA22N50A IRFBA22N50
OCR Text ...D S , D ra in-to -Source V olta ge (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Ty...Avalanche Energy (mJ) VDS L D R IV E R 2000 ID 10.7A 15A BOTTOM 24A TOP RG 20V ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

File Size 104.61K  /  8 Page

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    IRFI9634G

IRF[International Rectifier]
Part No. IRFI9634G
OCR Text ... -VG S , Ga te -to-Source Volta ge (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized ...Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Curren...
Description -250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

File Size 119.17K  /  8 Page

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    PSMN3R3-80PS PSMN3R3-80PS-15

NXP Semiconductors
Part No. PSMN3R3-80PS PSMN3R3-80PS-15
OCR Text ...qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 features and benefits ? high efficiency due to...avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =2...
Description N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
N-channel 80 V, 3.3 m standard level MOSFET in TO-220

File Size 203.88K  /  15 Page

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    SSH22N50A SSH22N50

Fairchild Semiconductor
Part No. SSH22N50A SSH22N50
OCR Text ... =C rss gd VSD , S ce ai Vol ge [ our -Dr n ta V] Fig 6. Gate Charge vs. Gate-Source Voltage C iss 1 0 V =1 0V 0 DS V =2 0V 5 DS V =4 0V 0 DS 40 00 VGS , Gate-Source Voltage [V] Capacitance [pF] 5 20 00 C oss C...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 231.37K  /  7 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI468 AOD468
OCR Text ...vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vg...
Description 300V,11.5A N-Channel MOSFET

File Size 1,502.32K  /  6 Page

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    TOSHIBA
Part No. 2SK3561
OCR Text ...c storage tempe r a t ure ran ge t stg - 5 5 ~ 1 5 0 c 0.64 0 . 15 2.6 4.5 0. 2 1.1 1.1 0.69 0. 1 5 2.8max 12.5 min. 15.0 0. 3 3.9 3.0 3.2 0.2 10 0.3 2.54 0. 2 5 2.54 0. 2 5 2 3 1 2.7 0. 2 1. gate 2. ...
Description MOSFET 2SK/2SJ Series

File Size 187.19K  /  3 Page

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    IRFPS37N50A IRFPS37N50

IRF[International Rectifier]
Part No. IRFPS37N50A IRFPS37N50
OCR Text ... V D S , D rain-to-Source Volta ge (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. T...Avalanche Energy (mJ) TOP BOTTOM 2500 VDS L D R IV E R ID 16A 23A 36A 2000 R...
Description Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
HEXFET? Power MOSFET

File Size 111.26K  /  8 Page

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    FMV21N50ES

Fuji Electric
Part No. FMV21N50ES
OCR Text ...and of the gate threshold volta ge (4.2 0. 5v) high avalanche durability applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristics absolute maximum ratings at tc=25 c (unle...
Description N-CHANNEL SILICON POWER MOSFET

File Size 434.25K  /  5 Page

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    IRFBL10N60A

IRF[International Rectifier]
VISHAY SILICONIX
Part No. IRFBL10N60A
OCR Text ...V D S a v , A v alanc he V olta ge (V ) 740 720 Charge 700 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as ...Avalanche Current 6 www.irf.com IRFBL10N60A Peak Diode Recovery dv/dt Test Circuit D.U.T ...
Description N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR

File Size 119.74K  /  8 Page

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    NXP Semiconductors N.V.
Part No. PSMN027-100BS
OCR Text ...qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 features and benefits ? high efficiency due to...avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =...
Description N-channel 100V 26.8 m standard level MOSFET in D2PAK.

File Size 197.75K  /  14 Page

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For ge-avalanche Found Datasheets File :: 1490    Search Time::1.234ms    
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