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  high voltage h-effect smart fa Datasheet PDF File

For high voltage h-effect smart fa Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    Diodes
Part No. AH266
Description high voltage HALL EFFECT LATCH

File Size 276.68K  /  7 Page

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    AH26607

BCD Semiconductor Manufacturing Limited
Part No. AH26607
Description high voltage HALL EFFECT LATCH

File Size 191.36K  /  11 Page

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    BCDSEMI
Part No. AH266Z4-AE1 AH266_07 AH266 AH266Z4-BE1
Description high voltage HALL EFFECT LATCH

File Size 186.29K  /  11 Page

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    UH266L-G04-K

Unisonic Technologies
Part No. UH266L-G04-K
Description high voltage HALL EFFECT LATCH

File Size 177.34K  /  5 Page

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    UH266-15

Unisonic Technologies
Part No. UH266-15
Description high voltage HALL EFFECT LATCH

File Size 179.87K  /  5 Page

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    2SK3467 2SK3467-ZK 2SK3467-ZK-AZ

NEC Corp.
NEC[NEC]
Part No. 2SK3467 2SK3467-ZK 2SK3467-ZK-AZ
Description 80 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZK, 3 PIN
PROFET™: smart high Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
PROFET™: smart high Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Nch power MOS FET (Switching)

File Size 65.47K  /  8 Page

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    AH278Z4-AE1 AH278Z4-E1 AH278Z4-BE1 AH278

BCD Semiconductor Manufacturing, Ltd.
BCDSEMI
BCD Semiconductor Manufacturing Limited
Part No. AH278Z4-AE1 AH278Z4-E1 AH278Z4-BE1 AH278
Description high voltage HALL EFFECT LATCH 高压霍尔效应锁存

File Size 47.68K  /  2 Page

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    ATC Analog Technology
Part No. ATS266IS4A ATS266S4 ATS266S4A
Description 4-28V high voltage hall effect latch

File Size 118.27K  /  5 Page

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    AH266Z4-BE1 AH266Z4-E1 AH266Z4-AE1 AH266

BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
BCDSEMI
BCD Semiconductor Manufacturing, Ltd.
Part No. AH266Z4-BE1 AH266Z4-E1 AH266Z4-AE1 AH266
Description high voltage HALL EFFECT LATCH 高压霍尔效应锁存

File Size 47.67K  /  2 Page

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    AH27807 AH278Z4-BE1

BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing, Ltd.
Part No. AH27807 AH278Z4-BE1
Description high voltage HALL EFFECT LATCH 高压霍尔效应锁存

File Size 185.48K  /  11 Page

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For high voltage h-effect smart fa Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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