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  idm Datasheet PDF File

For idm Found Datasheets File :: 16887    Search Time::1ms    
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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ...Maximum Ratings Symbol VDSS ID idm VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 70C) Drain Current - Pulsed (Note 1) ...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ...ngs SYMBOL VDSS VDGR VGS ID ID idm PD TJ, TSTG TL Tpkg Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20k) (Note 1) Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2) Continuous (TA...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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    HUF76132SK8 HUF76132SK8T

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76132SK8 HUF76132SK8T
OCR Text ... . . . . . . . . . . . . . . . .idm Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 259.00K  /  12 Page

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    ITF86172SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86172SK8T
OCR Text ... . . . . . . . . . . . . . . . .idm Figure 4 Logic Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 2.5 W Level Derate Above 25oC . . . . . . . . . . . . . . . . ....
Description 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
10A 30V 0.016 Ohm P-Channel Logic Level Power MOSFET

File Size 173.61K  /  12 Page

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    ITF86182SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86182SK8T
OCR Text ... . . . . . . . . . . . . . . . .idm Figure 4 Level 2.5 W Power Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . ....
Description 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

File Size 172.94K  /  12 Page

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    IXTQ64N25 IXTQ64N25P IXTT64N25P

IXYS[IXYS Corporation]
Part No. IXTQ64N25 IXTQ64N25P IXTT64N25P
OCR Text ...m Symbol VDSS VDGR VGSM ID25 idm IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 V V V A A A mJ J V/ns W C C C C TO-3P (IXTQ) TC = 25C TC =...
Description Discrete MOSFETs: Standard N-channel Types
PolarHT Power MOSFET

File Size 573.67K  /  5 Page

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    MSAFX20N60A

MICROSEMI[Microsemi Corporation]
Part No. MSAFX20N60A
OCR Text ...BVDSS BVDGR VGS VGSM ID25 ID100 idm IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd 5.0 300 -55 to +150 -55 to +150 20 80 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Am...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 47.71K  /  2 Page

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    RFP70N03 RF1S70N03 RF1S70N03SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N03 RF1S70N03 RF1S70N03SM
OCR Text .... . . . . . . . . . . . . . . . idm Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 70A/ 30V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

File Size 588.19K  /  6 Page

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    RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM
OCR Text .... . . . . . . . . . . . . . . . idm Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

File Size 90.34K  /  6 Page

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    SI9400DY

Vishay Intertechnology, Inc.
Vishay Siliconix
Part No. SI9400DY
OCR Text ...TA = 70_C Symbol VDS VGS ID idm IS PD TJ, Tstg Limit -20 "20 "2.5 "2.0 "10 -2.0 2.5 Unit V A W 1.6 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board,...
Description P-Channel 20-V (D-S) MOSFET, Low-Threshold P通道20 - V(下局副局长)MOSFET的低阈

File Size 57.30K  /  4 Page

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