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  mil-std-202 Datasheet PDF File

For mil-std-202 Found Datasheets File :: 22987    Search Time::2.562ms    
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    APT8014L2FLL

ADPOW[Advanced Power Technology]
Part No. APT8014L2FLL
OCR Text ... MAX UNIT C/W 0.14 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.37mH, R = 25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8014L2LL

ADPOW[Advanced Power Technology]
Part No. APT8014L2LL
OCR Text ...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.37mH, R = 25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.58K  /  2 Page

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.72mH, R = 25, Peak I = 44A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Reserves the right to change, withou...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.72mH, R = 25, Peak I = 44A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 , THERMAL I...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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    APT8018 APT8018L2VR APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018 APT8018L2VR APT8018JN
OCR Text ... MAX UNIT C/W 0.15 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.46mH, R = 25W, Peak I = 43A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.92K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.16mH, R = 25W, Peak I = 38A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...AX UNIT C/W 0.18 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.15mH, R = 25W, Peak I = 38A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit r...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ...AX UNIT C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.51mH, R = 25W, Peak I = 33A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit r...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.51mH, R = 25W, Peak I = 33A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ... MAX UNIT C/W 0.22 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.20mH, R = 25W, Peak I = 31A j G L 5 The maximum current is limited by lead temperature 1 Repetitive Rating: Pulse width limited by maximum junction tem...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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