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  mos-transistors Datasheet PDF File

For mos-transistors Found Datasheets File :: 2625    Search Time::1.625ms    
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    VN3205 VN3205N3 VN3205N6 VN3205N8 VN3205ND

SUTEX[Supertex, Inc]
Part No. VN3205 VN3205N3 VN3205N6 VN3205N8 VN3205ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) D4 G4 S4 NC S3 G3 D3 Absolute Maximum Ratings Drain-to-Source Voltage Drain-t...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 452.23K  /  4 Page

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    Rohm Co., Ltd.
ROHM[Rohm]
Part No. QS6M4
OCR Text ... Structure Silicon P-channel MOS FET Silicon N-channel MOS FET Equivalent circuit (6) (5) 1 (4) 0.85 2.9 (2) (5) Packa...Transistors N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 0.5 - - - 1.0 - ...
Description Small switching 小开

File Size 73.32K  /  6 Page

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    Supertex
Part No. VP2206
OCR Text ...ature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...transistors, etc.) features ? free from secondary breakdown ? low power drive requirement ? ease of ...
Description P-Channel Enhancement Mode Vertical DMOS FETs

File Size 483.32K  /  4 Page

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    VN2460 VN2460N3 VN2460N8 VN2460NW

SUTEX[Supertex, Inc]
Part No. VN2460 VN2460N3 VN2460N8 VN2460NW
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options Absolute Maximum Ratings D Drain-to-Source Voltage Drai...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 451.05K  /  4 Page

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    VN2450 VN2450N3 VN2450N8 VN2450NW

Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Part No. VN2450 VN2450N3 VN2450N8 VN2450NW
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 450.79K  /  4 Page

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    VN2406 VN2410 VN2410L VN2406L

SUTEX[Supertex, Inc]
Part No. VN2406 VN2410 VN2410L VN2406L
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 436.83K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. CA3420_05 CA3420 CA3420E CA3420EZ
OCR Text ...e) PKG. DWG. # E8.3 E8.3 X1 MOS BIPOLAR + MOS BIPOLAR *Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. NOTE: Intersil Pb-free plus anneal...
Description 0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifier

File Size 212.34K  /  5 Page

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    VN2222 VN2222NC VN2224 VN2224N3

SUTEX[Supertex, Inc]
Part No. VN2222 VN2222NC VN2224 VN2224N3
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options S S S G1 G2 G3 G4 S 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 ...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 38.54K  /  4 Page

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    VN2210 VN2210N2 VN2210N3

Supertex, Inc.
SUTEX[Supertex, Inc]
Part No. VN2210 VN2210N2 VN2210N3
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-...
Description INDUCTOR, 1812 CASE, 1000UH; Inductor type:Wirewound; Inductance:1000uH; Tolerance, inductance: /-10%; Resistance:30R; Current, DC max:70mA
N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 40.66K  /  4 Page

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    Supertex Inc
Part No. VN4012L
OCR Text ...ature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...transistors, etc.) n-channel enhancement-mode v ertical dmos fets package option note: see package ...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 438.88K  /  2 Page

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