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photo-mosfet Datasheet PDF File

For photo-mosfet Found Datasheets File :: 797 Search Time::3.516ms
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				International Rectifier
Part No.	IRHNA7Z60 IRHNA8Z60
OCR Text	...140 -- A Peak radiation induced photo-current -- 800 -- -- 160 -- A/sec Rate of rise of photo-current 0.1 -- -- 0.8 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion Cu LET (Si) (MeV/mg/cm2) 28 ...
Description	30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体
File Size	127.16K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHI7460SE IRHI7460SE-15
OCR Text	...7 7 a peak radiation induced photo-current di/dt 16 2.3 a/sec rate of rise of photo-current l 1 27 133 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range v ds bias v gs bias param...
Description	Simple Drive Requirements 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package
File Size	34.37K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB7Z60 IRHNB8Z60
OCR Text	...140 -- A Peak radiation induced photo-current -- 800 -- -- 160 -- A/sec Rate of rise of photo-current 0.1 -- -- 0.8 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion Cu LET (Si) (MeV/mg/cm2) 28 ...
Description	30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
File Size	110.79K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7389
OCR Text	...-60 -- A Peak radiation induced photo-current -- -- -800 -- -- -160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter BV DSS Typ. -100 ...
Description	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
File Size	91.26K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	RHN7150
OCR Text	...100 -- A Peak radiation induced photo-current -- -- 1000 -- -- 150 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter BV DSS Typ. 100 Uni...
Description	TRANSISTOR N-CHANNEL
File Size	452.79K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHI7360SE
OCR Text	... 6.4 a peak radiation induced photo-current di/dt 16 2.3 a/sec rate of rise of photo-current l 1 20 137 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range v ds bias v gs bias para...
Description	Simple Drive Requirements 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package
File Size	34.18K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRH93230 IRH9230
OCR Text	... -12 a peak radiation induced photo-current di/dt -160 -8 a/sec rate of rise of photo-current l 1 1 20 h circuit inductance required to limit di/dt table 3. single event effects ? let (si) fluence range v ds bias v gs bias param...
Description	-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
File Size	60.46K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSH2N7262
OCR Text	... 20 a peak radiation induced photo-current di/dt 160 8.0 a/sec rate of rise of photo-current l 1 1.0 20 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range ...
Description	Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85
File Size	303.37K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA8064 IRHNA7064
OCR Text	...140 -- A Peak radiation induced photo-current -- 800 -- -- 160 -- A/sec Rate of rise of photo-current 0.1 -- -- 0.8 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter BV DSS Typ. 60 Units...
Description	TRANSISTOR N-CHANNEL
File Size	81.43K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHF7130 JANSH2N7261 IRHF8130 JANSR2N7261
OCR Text	...100 -- A Peak radiation induced photo-current -- -- 800 -- -- 160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion Cu LET (Si) (MeV/mg/cm2) 28 ...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	287.32K / 12 Page	View it Online	Download Datasheet

For photo-mosfet Found Datasheets File :: 797 Search Time::3.516ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |