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RENESAS[Renesas Electronics Corporation]
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| Part No. |
BCR08aM
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| OCR Text |
...M
LOW POWER USE LOW POWER USE
planar PaSSIVaTION TYPE planar PaSSIVaTION TYPE
BCR08aM
OUTLINE DRaWING
5.0 MaX.
Dimensions in mm
...a a a2s W W V a C C g
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIaC>
BCR08aM
... |
| Description |
MITSUBISHI SEMICONDUCTOR
LOW POWER USE planar PaSSIVaTION TYPE
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| File Size |
90.08K /
6 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR10CS
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| OCR Text |
planar PaSSIVaTION TYPE
BCR10CS
OUTLINE DRaWING
Dimensions in mm
4
1.5 MaX
10.5 MaX
4.5 1.3
1.5 MaX 8.60.3 9.80.5
...a a a2s W W V a C C g
V1. Gate open.
Feb.1999
(1.5)
MITSUBISHI SEMICONDUCTOR TRIaC
BC... |
| Description |
MEDIUM POWER USE NON-INSULaTED TYPE, planar PaSSIVaTION TYPE
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| File Size |
75.46K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR12PM-14
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| OCR Text |
planar PaSSIVaTION TYPE
BCR12PM-14
OUTLINE DRaWING
Dimensions in mm
10.5 MaX 5.2
1.2
2.8
5.0
17
8.5
V
TYPE Na...a a a2s W W V a C C g V
Peak gate power dissipation average gate power dissipation Peak gate volt... |
| Description |
MEDIUM POWER USE INSULaTED TYPE, planar PaSSIVaTION TYPE
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| File Size |
60.50K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR12PM
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| OCR Text |
planar PaSSIVaTION TYPE
BCR12PM
OUTLINE DRaWING
10.5 MaX 5.2
Dimensions in mm
2.8
17 5.0
1.2
TYPE NaME VOLTaGE CLaSS
...a a a2s W W V a C C g V
Peak gate power dissipation average gate power dissipation Peak gate volt... |
| Description |
MEDIUM POWER USE INSULaTED TYPE, planar PaSSIVaTION TYPE
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| File Size |
82.72K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR2PM
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| OCR Text |
planar PaSSIVaTION TYPE
BCR2PM
OUTLINE DRaWING
Dimensions in mm
10.5 MaX 5.2
1.2
2.8
5.0
TYPE NaME
17
3.2 0.2
...a a a2s W W V a C C g
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIaC
BCR2PM
LOW... |
| Description |
LOW POWER USE INSULaTED TYPE/ planar PaSSIVaTION TYPE
LOW POWER USE INSULaTED TYPE, planar PaSSIVaTION TYPE
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| File Size |
47.49K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR3PM
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| OCR Text |
planar PaSSIVaTION TYPE
BCR3PM
OUTLINE DRaWING
10.5 MaX 5.2
Dimensions in mm
2.8
17 5.0
1.2
TYPE NaME VOLTaGE CLaSS
3...a a a2s W W V a C C g V
Peak gate power dissipation average gate power dissipation Peak gate volt... |
| Description |
LOW POWER USE INSULaTED TYPE, planar PaSSIVaTION TYPE
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| File Size |
80.99K /
5 Page |
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it Online |
Download Datasheet |
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UTC[Unisonic Technologies]
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| Part No. |
BU407
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| OCR Text |
planar TRaNSISTOR
NPN EXPITaXIaL planar TRaNSISTOR
DESCRIPTION
The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications.
FEaTURE
*High breakdown voltage
1
TO-220... |
| Description |
NPN EXPITaXIaL planar TRaNSISTOR
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| File Size |
48.21K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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