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				International Rectifier
Part No.	IRF1404
OCR Text	...onal Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...a wide variety of applications. The TO-220 package is universally preferred for all commercial-indus...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162a)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...er MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repe...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131a? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131a) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131a) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131a?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...er MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repe...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169a? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169a?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169a) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169a)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...l Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100a?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100a) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100a) TRaNSISTOR \| MOSFET \| N-CHaNNEL \| 75V V(BR)DSS \| 100a I(D) \| TO-263aB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号a（丁）\|63aB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...er MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repe...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130a? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130a?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130a) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130a)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...er MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repe...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142a)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this H...a plastic package. at high ambient temperatures, the IRF1704 can carry up to 20% more current than s...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170a)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...onal Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the...a customized leadframe for enhanced thermal characteristics and multiple-die capability making it id...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...wer MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalan...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220aB package aUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...ower MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalan...
Description	aUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

For processing a Found Datasheets File :: 50000 Search Time::1.531ms
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