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Samsung Electronic
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Part No. |
K7N163645MK7N161845M
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OCR Text |
...ility for incoming signals. for read cycles, pipelined sram output data is temporarily stored by an edge triggered output register and then ...write control pin. ? self-timed write cycle. ? three chip enable for simple depth expansion with... |
Description |
512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
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File Size |
355.57K /
20 Page |
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Samsung Electronic
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Part No. |
K7N163645AK7N163245AK7N161845A
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OCR Text |
...ility for incoming signals. for read cycles, pipelined sram output data is temporarily stored by an edge triggered output register and then ...write control pin. ? self-timed write cycle. ? three chip enable for simple depth expansion with... |
Description |
512Kx36/32 & 1Mx18-Bit Pipelined NtRAMData Sheet
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File Size |
628.20K /
28 Page |
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it Online |
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Samsung Electronic
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Part No. |
K5Q6432YCM-T010
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OCR Text |
... achieved within 2ms. in serial read operation, a byte can be read by 50ns. the dq pins serve as the ports for address and data input/output as well as command inputs. even the write-intensive systems can take advantage of the flash s exte... |
Description |
64M Bit Voltage Full CMOS Static RAM Data Sheet
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File Size |
617.62K /
32 Page |
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it Online |
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Samsung Electronic
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Part No. |
K5P6480YCM-T085
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OCR Text |
... achieved within 2ms. in serial read operation, a byte can be read by 50ns. the i/o pins serve as the ports for address and data input/output as well as command inputs. even the write-intensive systems can take advantage of the flash s ext... |
Description |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
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File Size |
549.73K /
29 Page |
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it Online |
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Samsung Electronic
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Part No. |
K4H280438C/K4H280838C
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OCR Text |
...ferent bank 3 4 old new old new read legal illegal legal illegal read + ap *1 legal illegal legal illegal
- 5 - rev. 0.7 nov.3. 2001 1...write bank 3.3 essential functionality for ddr sdram 3.3.1 burst read operation 3.3.2 burst write op... |
Description |
128Mb DDR SDRAM Data Sheet
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File Size |
328.35K /
54 Page |
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it Online |
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Aeroflex Circuit Techno...
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Part No. |
ACT-S512K8N-055P4Q ACT-S512K8N-055P4T
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OCR Text |
...z standby (deselect/power down) read l l h data out active output disable l h h high z active (deselected) write l x l data in active capacitance (v in = 0v, f = 1mhz, tc = 25c, unless otherwise noted, guaranteed but not tested ) symbol p... |
Description |
ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
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File Size |
83.76K /
8 Page |
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it Online |
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Price and Availability
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