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				STMicroelectronics
Part No.	M50LPW080 M50LPW080K M50LPW080K1T M50LPW080K5T M50LPW080N M50LPW080N1T M50LPW080N5T
OCR Text	...nable Row/Column Address Select ready/busy Output Interface Reset Supply Voltage Optional Supply Voltage for Fast Program and Fast Erase Operations Ground Not Connected Internally tion. During Bus Write operations they represent the comm...
Description	8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
File Size	270.07K / 36 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB800VP-12 M5M29FT800FP-12 M5M29FB800VP-10 M5M29FT800FP-10 M5M29FT800VP-10 M5M29FT800RV-10 M5M29FT800RV-12 M5M29FB800FP-10 M5M29FT800VP-12 M5M29FB800VP-80 M5M29FT800FP M5M29FT800RV-80-10 M5M29FT800RV-80-12 M5M29FT800VP M5M29FT800VP-80
OCR Text	...ER DOWN INPUT BYTE ENABLE INPUT ready/busy OUTPUT CUI WSM INPUT/OUTPUT BUFFERS D15/A-1D14D13D12 D3 D2 D1 D0 DATA INPUTS/OUTPUTS FUNCTION The M5M29FB/T800FP,VP,RV includes on-chip program/erase control circuitry. The Write...
Description	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
File Size	150.57K / 14 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB84VD2002 MB84VD2002-10 MB84VD2003 MB84VD2003-10
OCR Text	...ram or erase cycle completion * ready-busy output (RY/BY) Hardware method for detection of program or erase cycle completion * Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. * Low VCC w...
Description	8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
File Size	188.20K / 30 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB84VD2008 MB84VD2008-10 MB84VD2009 MB84VD2009-10
OCR Text	...ram or erase cycle completion * ready-busy output (RY/BY) Hardware method for detection of program or erase cycle completion * Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. * Low VCC w...
Description	8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
File Size	181.11K / 30 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR
OCR Text	...nput, page program, and Read 1. ready busy Output The R/B output signal is used to indicate the operating status of the device. During program, erase, or read, R/B is low and will return high upon the completion of the operation. The output...
Description	FLASH MEMORY 32M (4M x 8) BIT NAND-type
File Size	286.17K / 42 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR
OCR Text	...nput, page program, and Read 1. ready busy Output The R/B output signal is used to indicate the operating status of the device. During program, erase, or read, R/B is low and will return high upon the completion of the operation. The output...
Description	FLASH MEMORY 64M (8M x 8) BIT NAND-type
File Size	280.47K / 43 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM82A1FT00 TC58DVM72A TC58DVM82F1FT00 TC58DAM72F1FT00 TC58DAM82A1FT00 TC58DAM72A1FT00 TC58DAM82F1FT00 TC58DVM72A1FT TC58DVM72F1FT TC58DVMXXX
OCR Text	...ress latch enable Write protect ready/busy Ground input Power supply I/O port Power supply Ground 2003-01-24 2/34 TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 BLOCK DIAGRAM VCCQ VCC VSS Status register I/O...
Description	Flash - NAND 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
File Size	364.95K / 34 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70
OCR Text	...Select Input Write Enable Input ready/busy Output Hardware Reset Input Write Protect / Program Acceleration Input Power Supply Ground BYTE WE RY/BY RESET WP/ACC VDD VSS TC58FVT641/B641XB 1 A B C D E F G H J K L M NC NC NC NC A3 A...
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	590.42K / 53 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58FVB641FTXB-10 TC58FVB641FTXB-70 TC58FVT641XB-10
OCR Text	...Select Input Write Enable Input ready/busy Output Hardware Reset Input Write Protect / Program Acceleration Input Power Supply Ground BYTE WE RY/BY RESET WP/ACC VDD VSS TC58FVT641/B641XB 1 A B C D E F G H J K L M NC NC NC NC A3 A...
Description	64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY 64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
File Size	586.97K / 53 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
Part No.	V29C51400B V29C51400T
OCR Text	... Power Supply Ground No Connect ready/busy Output Selects 8-Bit or 16-Bit mode A15 A14 A13 A12 A11 A10 A9 A8 N/C N/C WE N/C N/C N/C RY/BY N/C A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 4...
Description	4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY
File Size	68.28K / 16 Page	View it Online	Download Datasheet

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