rg-188 pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 539 Search Time::0.922ms
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				ON Semiconductor
Part No.	NTB6410AN NTB6410ANG NTB6410ANT4G NTP6410AN NTP6410ANG
OCR Text	...c, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 1 2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note ...
Description	N-Channel Power MOSFET 100 V, 76 A, 13 m楼?
File Size	138.07K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text	...10 V 73 --- ID = -12A ns 53 --- RG = 6.0W, VGS = 4.5V 84 --- RD = 0.8W, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 1460 ...188) 1.40 (.055) 1.14 (.045) 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103)...
Description	-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	169.26K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC International Rectifier
Part No.	OM6215SS OM6214SS OM6216SS OM6217SS
OCR Text	...f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V (MOSFET) switching times are essentially independent of operating temperature. gfs...188 REF. .140 TYP. .270 MAX. TC - CASE TEMPERATURE ( C) 205 Crawford Street, Leominster, MA...
Description	30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
File Size	42.54K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL
OCR Text	...50V, starting TJ = 25C, L =27mH RG = 25, I AS = 6.2A. (See Figure 11) Pulse width 300s; duty cycle 2%. Uses IRFBC40 data and test con...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
File Size	346.70K / 10 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT47N65BC3
OCR Text	... 13V VDD = 380V ID = 47A @ 125C RG = 1.8 6 MIN TYP MAX UNIT 7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200 J ns nC ...188 100 50 OPERATION HERE LIMITED BY R (ON) DS 30,000 10,000 C, CAPACITANCE (pF) APT47N65BC3 ...
Description	Super Junction MOSFET
File Size	176.16K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40KD2 1983
OCR Text	... 25A, VCC = 480V 250 VGE = 15V, RG = 10 220 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 4.2 ---...188 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---160 N...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated From old datasheet system
File Size	146.07K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA60N60UFD FGA60N60UFDTU
OCR Text	...VGE = 15V VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = ...188 21 97 80 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGA60N60UFD Rev. A 2 www.fa...
Description	600V, 60A Field Stop IGBT
File Size	774.56K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STS8DNH3LL STS8DNH3LL08
OCR Text	...st conditions VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V (see Figure 16) VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V (see Figure 16) Min. Typ. 12 14.5 ...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET III Power MOSFET Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET?/a> III Power MOSFET Dual n-channel 30 V - 0.018 楼? - 8 A - SO-8 low gate charge STripFET垄芒 III Power MOSFET
File Size	290.84K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STS5NS150
OCR Text	...onditions ID = 2.5 A VDD = 75 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 1) VDD= 120V ID= 5A VGS= 10V (see test circuit, Figure 2) Min. ...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	N-CHANNEL 150V - 0.075 ohm - 5A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
File Size	276.63K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGIB15B60KD1P IRGIB15B60KD1P-15
OCR Text	...IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C Ref.Fig. 23 CT1 CT4 J d ns CT4 J ns IC = 15A, VCC = 400V VGE = 15V...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	376.30K / 13 Page	View it Online	Download Datasheet

For rg-188 Found Datasheets File :: 539 Search Time::0.922ms
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