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  rg-6 u Datasheet PDF File

For rg-6 u Found Datasheets File :: 13990    Search Time::2.688ms    
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    IRLML0040TRPBF

International Rectifier
Part No. IRLML0040TRPBF
OCR Text ... VGS = 4.5V VDD = 20V ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 25V = 1.0MHz Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS Static Drain-to-Source On-Resistance Gate Threshold ...
Description HEXFET Power MOSFET

File Size 220.98K  /  10 Page

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    IRLML0030TRPBF

International Rectifier
Part No. IRLML0030TRPBF
OCR Text ...A VDS =15V VGS = 4.5V ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 15V = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Re...
Description HEXFET Power MOSFET
   HEXFET Power MOSFET

File Size 220.38K  /  10 Page

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    IRHM3450 IRHM4450 IRHM8450 IRHM7450

International Rectifier
Part No. IRHM3450 IRHM4450 IRHM8450 IRHM7450
OCR Text ...DD = 250V, ID = 11A, VGS = 12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-S...6 1100 16 Test Conditions A V ns C Tj = 25C, IS = 11A, VGS = 0V A Tj = 25C, IF = 11A, di/dt ...
Description RADIATION HARDENED POWER MOSFET THRu-HOLE (TO-254AA)
Simple Drive Requirements

File Size 297.94K  /  12 Page

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    IRF644NS SIHF644NSTL-E3 IRF644NSPBF IRF644NSTRL IRF644NSTRLPBF IRF644NSTRR IRF644NSTRRPBF IRF644NLPBF SIHF644NS-E3 SIHF6

Vishay Siliconix
Part No. IRF644NS SIHF644NSTL-E3 IRF644NSPBF IRF644NSTRL IRF644NSTRLPBF IRF644NSTRR IRF644NSTRRPBF IRF644NLPBF SIHF644NS-E3 SIHF644NSTR SIHF644N-E3 SIHF644NSTR-E3 IRF644NPBF SIHF644NL-E3
OCR Text ... Starting TJ = 25 C, L = 5.0 H, RG = 25 IAS = 8.4 A (see fig. 12). c. ISD 8.4 A, dI/dt 378 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. This is a calculated value limited to TJ = 175 C. THERMAL RESISTANCE RATINGS PARAMETER Maxim...
Description Power MOSFET

File Size 168.86K  /  8 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...tarting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before us...6.0 V ID - Drain Current - A 20 15 10 5 0 0 30 VDS - Drain to Source Voltage - V 10 20 ID -...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    FQB22P10TMF085

Fairchild Semiconductor
Part No. FQB22P10TMF085
OCR Text ... -10 V VDD = -50 V, ID = -22 A, RG = 25 (Note 4, 5) ------(Note 4, 5) 17 170 60 110 40 7.0 21 45 350 130 230 50 --- ns ns ns n...6 -22 -88 -4.0 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum ...
Description 100V P-Channel MOSFET

File Size 653.99K  /  8 Page

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    SIHB12N50C-E3 SIHF12N50C-E3 SIHP12N50C

Vishay Siliconix
Part No. SIHB12N50C-E3 SIHF12N50C-E3 SIHP12N50C
OCR Text ...starting TJ = 25 C, L = 2.5 mH, Rg = 25 , IAS = 12 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Numb...
Description 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC

File Size 149.75K  /  8 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 10 1 10...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 10 1 10...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ..., 5) VDD = 125 V, ID = 34 A, RG = 25 (Note 4, 5) -------- 45 335 110 150 60 14 36 100 680 230 310 80 --- ns ns ns ns nC nC ...6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 ID, Drain Current [A] 10 1 ID, Drain Current...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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