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LT3847N 2SB1645 AN8002M TDZ4V7J MSK4358S FTXSM12 S16400 S16400
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  tunnel Datasheet PDF File

For tunnel Found Datasheets File :: 432    Search Time::1.281ms    
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    TN28F020-120 TN28F020-150 TN28F020-90 TE28F020-120 TE28F020-150 TE28F020-90 P28F020-120 P28F020-150 P28F020-90 N28F020-1

INTEL[Intel Corporation]
Part No. TN28F020-120 TN28F020-150 TN28F020-90 TE28F020-120 TE28F020-150 TE28F020-90 P28F020-120 P28F020-150 P28F020-90 N28F020-15 N28F020-90 28F020 N28F020-150 E28F020-150 E28F020-120 E28F020-90 N28F020-120
OCR Text ...gned into Intel's ETOXTM (EPROM tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V...
Description 28F020 2048K (256K X 8) CMOS FLASH MEMORY

File Size 853.39K  /  38 Page

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    MX29F1615

MCNIX[Macronix International]
Part No. MX29F1615
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1615 uses a 5V 10% VCC supply to perform the Auto Erase and Auto Program algo...
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size 336.16K  /  26 Page

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    DELTA[Delta Electronics, Inc.]
Part No. IPM24S0C0S03FA IPM24S0A0R03FA IPM24S0A0S03FA IPM24S0B0R03FA IPM24S0B0S03FA IPM24S0C0R03FA
OCR Text ...e of the power module is a wind tunnel. THERMAL CURVES Thermal Testing Setup Delta's DC/DC power modules are characterized in heated vertical wind tunnels that simulate the thermal environments encountered in most electronics equipme...
Description Delphi Series IPM24S0C0, Non-Isolated, Integrated Point-of-Load Power Modules: 20V~36V input, 8.0~15.0V and 3A Output
Delphi Series IPM24S0C0, Non-Isolated, Integrated Point-of-Load Power Modules: 20V~36V input, 8.0~15.0V and 3A Output

File Size 597.25K  /  12 Page

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    MCNIX[Macronix International]
Part No. MX26L1620XBI-90 MX26L1620 MX26L1620MC-12 MX26L1620MC-90 MX26L1620MI-12 MX26L1620MI-90 MX26L1620TC-12 MX26L1620TC-90 MX26L1620TI-12 MX26L1620TI-90 MX26L1620XAC-12 MX26L1620XAC-90 MX26L1620XAI-12 MX26L1620XAI-90 MX26L1620XBC-12 MX26L1620XBC-90 MX26L1620XBI-12
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX26L1620 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and ...
Description 16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

File Size 681.36K  /  36 Page

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    MX26LV004TTC-70G MX26LV004B MX26LV004BQC-55 MX26LV004BQC-55G MX26LV004BQC-70 MX26LV004BQC-70G MX26LV004BTC-55 MX26LV004B

MCNIX[Macronix International]
Part No. MX26LV004TTC-70G MX26LV004B MX26LV004BQC-55 MX26LV004BQC-55G MX26LV004BQC-70 MX26LV004BQC-70G MX26LV004BTC-55 MX26LV004BTC-55G MX26LV004BTC-70 MX26LV004BTC-70G MX26LV004T MX26LV004TQC-55 MX26LV004TQC-55G MX26LV004TQC-70G MX26LV004TTC-55 MX26LV004TTC-55G MX26LV004TTC-70 MX26LV004TQC-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV004T/B uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto...
Description 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

File Size 456.82K  /  43 Page

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    MCNIX[Macronix International]
Part No. MX26LV008TTC-70 MX26LV008B MX26LV008BTC-55 MX26LV008BTC-70 MX26LV008T MX26LV008TTC-55
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV008T/B uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto...
Description 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

File Size 297.60K  /  43 Page

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    MCNIX[Macronix International]
Part No. MX26LV040TC-70G MX26LV040 MX26LV040PC-55 MX26LV040PC-55G MX26LV040PC-70 MX26LV040PC-70G MX26LV040QC-55 MX26LV040QC-55G MX26LV040QC-70 MX26LV040QC-70G MX26LV040TC-55 MX26LV040TC-55G MX26LV040TC-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV040 uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto Pr...
Description 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

File Size 585.52K  /  40 Page

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    MCNIX[Macronix International]
Part No. MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV400BTC-55G MX26LV400BTC-70 MX26LV400BTC-70G MX26LV400BXBC-55 MX26LV400BXBC-55G MX26LV400BXBC-70 MX26LV400BXBC-70G MX26LV400BXEC-55 MX26LV400BXEC-55G MX26LV400BXEC-70 MX26LV400BXEC-70G MX26LV400TTC-55 MX26LV400TTC-55G MX26LV400TTC-70 MX26LV400TTC-70G MX26LV400TXBC-55 MX26LV400TXBC-55G MX26LV400TXBC-70 MX26LV400TXBC-70G MX26LV400TXEC-55 MX26LV400TXEC-55G MX26LV400TXEC-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV400 uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto Pr...
Description 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

File Size 547.38K  /  46 Page

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    MCNIX[Macronix International]
Part No. MX26LV800ATXEC-70G MX26LV800AB MX26LV800ABTC-55 MX26LV800ABTC-55G MX26LV800ABTC-70 MX26LV800ABTC-70G MX26LV800ABXBC-55 MX26LV800ABXBC-55G MX26LV800ABXBC-70 MX26LV800ABXBC-70G MX26LV800ABXEC-55 MX26LV800ABXEC-55G MX26LV800ABXEC-70 MX26LV800ABXEC-70G MX26LV800AT MX26LV800ATTC-55 MX26LV800ATTC-55G MX26LV800ATTC-70 MX26LV800ATTC-70G MX26LV800ATXBC-55 MX26LV800ATXBC-55G MX26LV800ATXBC-70 MX26LV800ATXBC-70G MX26LV800ATXEC-55 MX26LV800ATXEC-55G MX26LV800ATXEC-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV800AT/AB uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and au...
Description 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

File Size 556.30K  /  50 Page

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    MCNIX[Macronix International]
Part No. MX28F160C3TXAI-90G MX28F160C3B MX28F160C3BTC-11 MX28F160C3BTC-11G MX28F160C3BTC-70 MX28F160C3BTC-70G MX28F160C3BTC-90 MX28F160C3BTC-90G MX28F160C3BTI-11 MX28F160C3BTI-11G MX28F160C3BTI-70 MX28F160C3BTI-70G MX28F160C3BTI-90 MX28F160C3BTI-90G MX28F160C3BXAC-11 MX28F160C3BXAC-11G MX28F160C3BXAC-70 MX28F160C3BXAC-70G MX28F160C3BXAC-90 MX28F160C3BXAC-90G MX28F160C3BXAI-11 MX28F160C3BXAI-11G MX28F160C3BXAI-70 MX28F160C3BXAI-70G MX28F160C3BXAI-90 MX28F160C3BXAI-90G MX28F160C3T MX28F160C3TTC-11 MX28F160C3TTC-11G MX28F160C3TTC-70 MX28F160C3TTC-70G MX28F160C3TTC-90 MX28F160C3TTC-90G MX28F160C3TTI-11 MX28F160C3TTI-11G MX28F160C3TTI-70 MX28F160C3TTI-70G MX28F160C3TTI-90 MX28F160C3TTI-90G MX28F160C3TXAC-11 MX28F160C3TXAC-11G MX28F160C3TXAC-70 MX28F160C3TXAC-70G MX28F160C3TXAC-90 MX28F160C3TXAC-90G MX28F160C3TXAI-11 MX28F160C3TXAI-11G MX28F160C3TXAI-70 MX28F160C3TXAI-70G MX28F160C3TXAI-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX28F160C3T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and aut...
Description 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 414.25K  /  44 Page

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For tunnel Found Datasheets File :: 432    Search Time::1.281ms    
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