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  u-mos-h Datasheet PDF File

For u-mos-h Found Datasheets File :: 3948    Search Time::2.297ms    
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    Sanken
Part No. STRL472
OCR Text ...10 2 1/10 ? ? ? ? u? ?? mosfet ic i M ? b? ? ? ic ? ?j ?M? prc* ? ?? * prc pulse ratio control ??? off jg? on j...mos fet S?p? 1 ? 6 p d1 3 2.5 w ?o S?p? mic 8 C 10 p d2 4 0.14 w j? ? ? D ...
Description Power IC

File Size 357.67K  /  10 Page

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    RX-8564LC

Epson ToYoCom
Part No. RX-8564LC
OCR Text ...E p in i n p ut FE b it C L K O U T pi n o u tp ut Terminal connection / External dimensions Function 0.5 (Unit:mm) RX - 8564 LC 1. 2. 3. 4. 5. 6. N.C. N.C. N.C. N.C. / INT GND 2.8 2.4 1. 2 Max. 12. 3.6 N.C. CLKOE VDD CL...
Description I2C-Bus INTERFACE REAL TIME CLOCK MODULE

File Size 293.65K  /  2 Page

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    2SK3712 2SK3712-Z

NEC Corp.
NEC[NEC]
Part No. 2SK3712 2SK3712-Z
OCR Text ...RCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 ...
Description SWITCHING N-CHANNEL POWER MOSFET

File Size 162.10K  /  8 Page

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    RD02MUS1B11

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD02MUS1B11
OCR Text ...t v ds = 17 v, v gs =0v - - 100 u a i gss gate cutoff current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds = 12 v, i ds =...mos fet ( discrete ) > rd02mus 1 b rohs compliance,silicon mosfet power transistor 175mhz,520mhz,2w ...
Description RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

File Size 425.78K  /  9 Page

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    RD07MVS2 RD07MVS211

Mitsubishi Electric Semiconductor
Part No. RD07MVS2 RD07MVS211
OCR Text ...t v ds =1 7 v, v gs =0v - - 200 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v...mos fet ( discrete ) > rd07mvs 2 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w p...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 443.38K  /  10 Page

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    RD07MVS1 RD07MVS111

Mitsubishi Electric Semiconductor
Part No. RD07MVS1 RD07MVS111
OCR Text ...t v ds =1 7 v, v gs =0v - - 200 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v...mos fet ( discrete ) > rd07mvs1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w pu...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 422.30K  /  10 Page

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    RD09MUP211

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD09MUP211
OCR Text ...nt v ds =1 7 v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v...mos fet ( discrete ) > rd0 9mup2 rohs compliance, silicon mosfet power transistor, 520mhz , 8 w publ...
Description RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

File Size 338.48K  /  9 Page

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    RD07MVS1B11

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B11
OCR Text ...t v ds =1 7 v, v gs =0v - - 200 u a i gss gate cutoff current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v, i ds =...mos fet ( discre te ) > rd07mvs1b rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w ...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 415.52K  /  9 Page

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    OMRON Scientific Technologies, Inc.
Part No. NP70N10KUF-E1-AZ
OCR Text ... 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cyc...
Description 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZK, 3 PIN

File Size 195.86K  /  9 Page

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