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  vdrm 600v reinforced insulatio Datasheet PDF File

For vdrm 600v reinforced insulatio Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    IRG4BC20W

IRF[International Rectifier]
Part No. IRG4BC20W
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

File Size 128.24K  /  8 Page

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    IRG4PC30K IRG4PC30KPBF

IRF[International Rectifier]
Part No. IRG4PC30K IRG4PC30KPBF
Description 600v UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 120.29K  /  8 Page

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    PC123X2YUP0F PC123X1NSZ0F PC123X1NUP0F PC123X2NSZ0F PC123X1YIP0F PC123X1YSZ0F PC123X1YFZ0F PC123X2YFZ0F PC123X2YSZ0F PC1

Sharp Electrionic Components
Part No. PC123X2YUP0F PC123X1NSZ0F PC123X1NUP0F PC123X2NSZ0F PC123X1YIP0F PC123X1YSZ0F PC123X1YFZ0F PC123X2YFZ0F PC123X2YSZ0F PC123X5NSZ0F PC123X1NFZ0F PC123X2NFZ0F PC123X1YUP0F PC123X2NUP0F PC123X2YIP0F PC123X5NFZ0F PC123X5NUP0F PC123X5YFZ0F PC123X5YIP0F PC123X5YSZ0F PC123X5YUP0F PC123X8NSZ0F PC123X8NFZ0F PC123X8NUP0F PC123X8YFZ0F PC123X8YIP0F PC123X8YSZ0F PC123X8YUP0F PC123XNNFZ0F PC123XNNSZ0F PC123XNNUP0F
Description 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER ROHS COMPLIANT, PLASTIC, SMT, DIP-4
DIP 4pin reinforced insulation Type Photocoupler

File Size 272.98K  /  16 Page

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    IRG4PC50W IRG4PC50WPBF

IRF[International Rectifier]
Part No. IRG4PC50W IRG4PC50WPBF
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

File Size 154.00K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC30W
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

File Size 137.40K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC40W IRG4BC40W-S
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

File Size 127.47K  /  8 Page

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    STGB3NB60SD STGB3NB60SDT4

ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STGB3NB60SD STGB3NB60SDT4
Description N-CHANNEL 3A - 600v D2PAK Power MESHIGBT N沟道3A 600v的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600v的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600v D2PAK Power MESH IGBT
N-CHANNEL 3A - 600v D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600v D2PAK Power MESH⑩ IGBT

File Size 335.41K  /  8 Page

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    AQY210EH AQY210EHA AQY214EHA AQY214EHAZ AQY210EHAX AQY210EHAZ AQY214EH AQY214EHAX

Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Part No. AQY210EH AQY210EHA AQY214EHA AQY214EHAZ AQY210EHAX AQY210EHAZ AQY214EH AQY214EHAX
Description PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA.
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA.
GU (General Use)-E Type 1-Channel (Form A) 4-pin Type

File Size 39.60K  /  3 Page

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. RURD660S9A RURD660 RURD660S RURD660S9ANL
Description 6A/ 600v Ultrafast Diodes
6A, 600v UltraFast Diode 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252
6A, 600v Ultrafast Diodes

File Size 387.77K  /  5 Page

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Part No. STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP1506
Description Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66

File Size 162.26K  /  1 Page

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For vdrm 600v reinforced insulatio Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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