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Comchip Technology
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Part No. |
CGRB302-G CGRB303-G CGRB305-G CGRB307-G CGRB306-G CGRB304-G CGRB301-G
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Description |
General Purpose Rectifier, V-RRM=100V, V-R=100V, I-O=3A General Purpose Rectifier, V-RRM=200v, V-R=200v, I-O=3A General Purpose Rectifier, V-RRM=600V, V-R=600V, I-O=3A General Purpose Rectifier, V-RRM=1000V, V-R=1000V, I-O=3A General Purpose Rectifier, V-RRM=800v, V-R=800v, I-O=3A General Purpose Rectifier, V-RRM=400V, V-R=400V, I-O=3A General Purpose Rectifier, V-RRM=50V, V-R=50V, I-O=3A
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File Size |
94.82K /
4 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BUZ32 BUZ32SMD
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Description |
Low voltage MOSFETs - Power MOSFET, 200v, DPAK, RDSon=0.4 Ohm, 9.5A, NL Low voltage MOSFETs - Power MOSFET, 200v, TO-220, RDSon=0.4 Ohm, 9.5A, NL SIPMOS Power Transistor
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File Size |
89.27K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
RURD620S FN3640 RURD620
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Description |
6A/ 200v Ultrafast Diodes Mechanism, high speeed, 3-inch ELM w/low profile cutter, one tab 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-251 6A 200v Ultrafast Diodes From old datasheet system 6A, 200v Ultrafast Diodes
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File Size |
49.70K /
4 Page |
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Download Datasheet |
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Comchip Technology
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Part No. |
B05S-G B10S-G B1S-G B2S-G B6S-G B8S-G
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Description |
Bridge Rectifiers, V<sub>RRM</sub>=50V, V<sub>DC</sub>=50V, I<sub>(AV)</sub>=0.8A Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=0.8A Bridge Rectifiers, V<sub>RRM</sub>=100V, V<sub>DC</sub>=100V, I<sub>(AV)</sub>=0.8A Bridge Rectifiers, V<sub>RRM</sub>=200v, V<sub>DC</sub>=200v, I<sub>(AV)</sub>=0.8A Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=0.8A Bridge Rectifiers, V-RRM=800v, V-DC=800v, I-(AV)=0.8A
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File Size |
93.25K /
4 Page |
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it Online |
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TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
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Part No. |
SML80H14
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Description |
N-CHANNEL ENHANCEMENT MODE HIGH voltage POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High voltage Power MOSFET(Vdss:800v,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800v,Id(cont):13.5A,Rds(on):0.58Ω))
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File Size |
26.04K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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