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Mitsubishi Electric
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| Part No. |
RD07MVS1
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| OCR Text |
...
12.0 40
Ta= + 25C f= 175M H z Vdd= 7.2V Idq= 700m A Po
100
Po d
80 10.0 80
Po(dBm) , Gp(dB) , Idd(A )
d(% )
20
40
...MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Silicon MOSFET ... |
| Description |
Silicon MOSFET Power Transistor
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| File Size |
241.52K /
8 Page |
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it Online |
Download Datasheet
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NEC[NEC]
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| Part No. |
UPD16835A UPD16835AGS-BGG
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| OCR Text |
...ATA selection Bit D7 D6 D5 - Hi-Z or L Hi-Z or L Hi-Z or L Hi-Z or L D4 D3 D2 D1 D0 0 0 0 0 1 or 0 1 or 0 1 or 0 1 or 0 EXP3 EXP2 EXP1 EXP0 ...MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Ste... |
| Description |
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
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| File Size |
219.74K /
32 Page |
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it Online |
Download Datasheet |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STLC3055N E-STLC3055N
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| OCR Text |
...Down High Impedance Feeding (HI-Z) Active Ringing
4/25
STLC3055N
Table 6 shows how to set the different SLIC operating modes. Table 6...MOS transistor (P-Channel) in order to generate the negative battery voltage needed for device opera... |
| Description |
WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT
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| File Size |
286.55K /
25 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
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| Part No. |
APT8020B2FLLG
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| OCR Text |
... t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-... |
| Description |
38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
245.11K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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