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For .0211 Found Datasheets File :: 89115 Search Time::1.875ms
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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...ier. www.irf.com 1 03/08/02 IRF3808S/IRF3808L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)...11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...Rectifier. www.irf.com 1 02/06/02 IRF3808 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing...11 ) Pulse width 300s; duty cycle 2%. Uses IRF4905 data and test conditions Starting TJ ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...VDSS = -55V G S RDS(on) = 0.02 ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...11 ) ISD -38A, di/dt -270A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 1.3mH RG =...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...01 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRF5305S/L 700 VDS L E A S ,...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...01 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - RG VDD 5 IRF5305 VDS L 700 E A S...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	... ] Drain-Source On-Resistance 02 .0 Fig 4. Source-Drain Diode Forward Voltage 01 .5 VGS = 10 V IDR , Reverse Drain Current 11 0 01 .0 VGS = 20 V 00 .5 @ N t : TJ = 2 oC oe 5 00 .0 0 15 30 45 6 0 10 0 @Nts: oe 1 VGS...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...01 0.001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF530NS/L L E A S , S ingle P ulse A valanche...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	... = 0.5 0.2 0.1 0.05 0.1 0.02 single pulse P D tp D = tp/T T 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 1E-06 1E-05 Pulse ...11 10 9 8 7 6 5 4 3 2 1 0 1.0E-01 1.0E-02 175 C minimum typical 1.0E-04 maximum 1.0E-05 1.0...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	... VGS = 4.5V 0.020 0.03 0.02 ID = 7.0A VGS = 10V 0.018 0.01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate -to -So...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET(R) MOSFET) www.irf...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

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