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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...jmax G VDSS = 75V RDS(on) = 0.0078 S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advance...02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty f...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...efits q q q q q q RDS(on) = 0.0078 ID = 130AV Description Specifically designed for Automotive applications, this Stripe Planar desi...02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 Notes: 1. Duty factor D = 2....
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...efits q q q q q q RDS(on) = 0.0075 ID = 142A Description Specifically designed for Automotive applications, this Stripe Planar desig...02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J =...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...wer MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for Automotive applications, this HEXFET(R) p...02/13/02 IRF1704 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... Max. 20 4.2 3.4 17 2.5 1.6 0.02 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W www.irf.com ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...02 0.01 SINGLE PULSE PDM 0.1 t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...02 0.01 0.01 SINGLE PULSE PDM 0.1 t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC +...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... j Parameter Typ. --- 0.50 Max. 0.50 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j ...02 0.01 J R1 R1 J 1 2 R2 R2 C 2 0.01 Ri (C/W) i (sec) 0.1951 0.000743 0.3050 0.008219 1 ...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...nt, steady state)j Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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