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0.19a Datasheet PDF File

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				Fairchild Semiconductor
Part No.	FDA18N50
OCR Text	0.265 @VGS = 10 V * Low gate charge ( typical 45 nC) * Low Crss ( typical 25 pF) * Fast switching * 100% avalanche tested * Improved dv/dt c...19A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 19A RG = 25 -------- 55 165 95 90 4...
Description	500V N-Channel MOSFET
File Size	726.27K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	BUZ21
OCR Text	0.100 Ohm, N-Channel Power MOSFET Features * 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.100 (BUZ21) field effect transistor designed for applications such as * SOA is Power Dissipation L...
Description	19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET
File Size	46.07K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HUF76419P3 HUF76419S3S HUF76419S3ST HUF76419S3STNL
OCR Text	0.040 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) ...19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J...
Description	60V N-Channel Logic Level UltraFET MOSFET 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
File Size	212.08K / 10 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SJ661
OCR Text	...335 33 285 295 195 80 15 12 --1.0 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7513-002 10.2 0.2 Pack...19A RL=1.58 VDD= --30V Avalanche Resistance Test Circuit 50 RG L DUT D PW=10s D.C.1% ...
Description	P-Channel Silicon MOSFET General-Purpose Switching Device
File Size	38.83K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFM460
OCR Text	...FET TECHNOLOGY (R) RDS(on) 0.27 ID 19A HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined ...
Description	POWER MOSFET THRU-HOLE (TO-254AA)
File Size	203.24K / 7 Page	View it Online	Download Datasheet

				Leshan Radio Company, Ltd. http://
Part No.	MMBTA20LT1
OCR Text	...ymbol V CEO V EBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipa...19A 0.05 P(pk) 0.02 0.01 t SINGLE PULSE 1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, D = t...
Description	General Purpose Amplifier (NPN Silicon) 通用放大器（NPN硅）
File Size	311.89K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB19N10 FQI19N10 FQB19N10TM
OCR Text	... * * * * * 19A, 100V, RDS(on) = 0.1 @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G S G! ...
Description	100V N-Channel QFET 100V N-Channel MOSFET
File Size	574.71K / 9 Page	View it Online	Download Datasheet

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