Description |
0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>8兆位,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>240000'>80000'>8 x 0000'>16位).0伏的cmos只,扇区擦除闪存 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 90 ns, PDSO40000'>8 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 90 ns, PDSO44 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 0000'>10000'>0000'>50 ns, PDSO44 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 70 ns, PDSO40000'>8 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 70 ns, PDSO44 0000'>8 Megabit (0000'>1,040000'>8,0000'>0000'>576 x 0000'>8-Bit/0000'>0000'>50000'>24,0000'>20000'>80000'>8 x 0000'>16-Bit) cmos 0000'>0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>0000'>50000'>10000'>2K X 0000'>16 FLASH 0000'>0000'>5V PROM, 0000'>10000'>0000'>50 ns, PDSO40000'>8
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