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INFINEON[Infineon Technologies AG]
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| Part No. |
SPW11N60CFD
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| OCR Text |
...: di/dt = 100 A/s
1200
C C
1000 900
Tj = 125C
Qrr
Qrr
1000
800 700 600
Tj = 25C
900
800 500 400 700 300 600 25 200 125 1 2 3 4 5 6 7 8 9
50
75
C Tj
A ID
11
19 Typ. reverse recovery charge Qrr = f(d... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
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| File Size |
152.09K /
12 Page |
 View
it Online |
Download Datasheet
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IXYS, Corp.
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| Part No. |
MCK500-14IO1 MDC500-14IO1
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| OCR Text |
...te of rise of off-state voltage 1000 - - v d = 80% v drm , linear ramp, gate o/c v/ s i drm peak off-state current - - 70 rated v drm ma i...1200 1300 820 14 1400 1500 930 16 1600 1700 1040 18 1800 1900 1150 2.0 extension of voltage grades t... |
| Description |
1294 A, 1400 V, SCR MODULE-7
1294 A, 1400 V, SCR MODULE-5
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| File Size |
436.23K /
11 Page |
View
it Online |
Download Datasheet |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
GA75TS120UPBF
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| OCR Text |
....5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000 v ge = 15 v 500 s pulse width 25 c 125 c v ce - collector to emitter voltage (v) i c - collector cur...1200 150 100 50 1 100 10 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f - forward voltage drop (v) i f - ins... |
| Description |
110 A, 1200 V, N-CHANNEL IGBT
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| File Size |
243.81K /
9 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
DZ3600S17K3-B2
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| OCR Text |
...900 v v ge = -15 v e rec 575 1000 mj mj t vj = 25c t vj = 125c w?rmewiderstand,chipbisgeh?use thermalresistance,junctionto...1200 1800 2400 3000 3600 4200 4800 5400 6000 6600 7200 t vj = 25c t vj = 125c schaltverlustediode... |
| Description |
IGBT-Module
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| File Size |
226.89K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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