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  1048576word x 32 bit dynamic r Datasheet PDF File

For 1048576word x 32 bit dynamic r Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    Samsung Electronicr>
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 50ns, VCC=5.0V, refresh period=64msr>1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 60ns, VCC=5.0V, refresh period=64msr>1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 60ns, VCC=5.0V, self-refreshr>1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 50ns, VCC=5.0V, refresh period=16msr>1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 60ns, VCC=5.0V, refresh period=16msr>1M r='#FF0000'>x 16r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 45ns, VCC=5.0V, self-refreshr>
File Size 803.02K  /  35 Page

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    SIEMENS A Gr>SIEMENS AGr>SIEMENS[Siemens Semiconductor Group]r>Infineonr>
Part No. HYMr='#FF0000'>324000GD-60 HYMr='#FF0000'>324000GD-50
Description 4M r='#FF0000'>x r='#FF0000'>32-r='#FF0000'>bit r='#FF0000'>dynamic rAM Module SMALL OUTLINE MEMOrY MODULE 4M r='#FF0000'>x r='#FF0000'>32 FAST PAGE DrAM MODULE, 60 ns, ZMA72r>CAP 0.5PF 50V /-0.2PF THIN-FILM SN96/AG4/NI 30PPM Tr-7-PAr>4M r='#FF0000'>x r='#FF0000'>32 r='#FF0000'>bit DrAM Module (SO-DIMM)r>-4M r='#FF0000'>x r='#FF0000'>32-r='#FF0000'>bit r='#FF0000'>dynamic rAM Module SMALL OUTLINE MEMOrY MODULEr>
File Size 26.21K  /  6 Page

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    Infineonr>SIEMENS[Siemens Semiconductor Group]r>
Part No. HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HYB5117800-50 HYB3117800BSJ-50 Q67100-Q1093 HB17800C HYB3117800BSJ-60 HYB5117800BSJ-50- Q67100-Q1092
Description 2M r='#FF0000'>x 8 r='#FF0000'>bit 2k 5 V 60 ns FPM DrAMr>2M r='#FF0000'>x 8 r='#FF0000'>bit 2k 3.3 V 60 ns FPM DrAMr>2M r='#FF0000'>x 8 r='#FF0000'>bit 2k 3.3 V 50 ns FPM DrAMr>2M r='#FF0000'>x 8 - r='#FF0000'>bit r='#FF0000'>dynamic rAM 2k refresh (Fast Page Mode)r>2M r='#FF0000'>x 8-r='#FF0000'>bit r='#FF0000'>dynamic rAMr>From old datasheet systemr>
File Size 176.79K  /  23 Page

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    Samsung Electronicr>
Part No. K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
Description 2M r='#FF0000'>x 8r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with Er='#FF0000'>xtended Data Out Data Sheetr>2M r='#FF0000'>x 8 r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out. Supply voltage 5V, 2K refresh cycle.r>2M r='#FF0000'>x 8 r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out. Supply voltage 3.3V, 2K refresh cycle.r>2M r='#FF0000'>x 8 r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out. Supply voltage 5V, 4K refresh cycle.r>
File Size 254.30K  /  21 Page

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    MAX3864 2292 MAX3864E_D MAX3864ESA MAX3864E/D

MAr='#FF0000'>xIM - Dallas Semiconductorr>Mar='#FF0000'>xim Integrated Products, Inc.r>
Part No. MAr='#FF0000'>x3864 2292 MAr='#FF0000'>x3864E_D MAr='#FF0000'>x3864ESA MAr='#FF0000'>x3864E/D
Description 2.5Gbps, 3V to 5.5V, Wide r='#FF0000'>dynamic range Transimpedance Preamplifierr>From old datasheet systemr>2.5Gbps / 3V to 5.5V / Wide r='#FF0000'>dynamic range Transimpedance Preamplifierr>
File Size 865.30K  /  12 Page

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    Samsung Electronicr>SAMSUNG[Samsung semiconductor]r>
Part No. KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 KM48C8104BK-5 KM48C8104BS-6 KM48C8104BS-5
Description 8M r='#FF0000'>x 8r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 5V, 50nsr>8M r='#FF0000'>x 8r='#FF0000'>bit CMOS r='#FF0000'>dynamic rAM with er='#FF0000'>xtended data out, 5V, 60nsr>
File Size 382.88K  /  21 Page

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    SIEMENS AGr>SIEMENS[Siemens Semiconductor Group]r>Infineonr>
Part No. HYMr='#FF0000'>324020GS-60 HYMr='#FF0000'>324020GS-50 HYMr='#FF0000'>324020S-60 HYMr='#FF0000'>324020S-50 Q67100-Q979 HYMr='#FF0000'>324020S-GS50 Q67100-Q2005
Description 4M r='#FF0000'>x r='#FF0000'>32-r='#FF0000'>bit r='#FF0000'>dynamic rAM Module 4米r='#FF0000'>32位动态随机存储器模块r>4M r='#FF0000'>x r='#FF0000'>32-r='#FF0000'>bit r='#FF0000'>dynamic rAM Module 4M r='#FF0000'>x r='#FF0000'>32 FAST PAGE DrAM MODULE, 60 ns, SMA72r>4M r='#FF0000'>x r='#FF0000'>32 r='#FF0000'>bit DrAM Moduler>
File Size 57.66K  /  10 Page

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    V53C16125H V53C16125HK60 V53C16125HT50

Mosel Vitelic Corpr>Mosel Vitelic, Corpr>Mosel Vitelic Corpr>
Part No. V53C16125H V53C16125HK60 V53C16125HT50
Description HIGH PErFOrMANCE 128K r='#FF0000'>x 16 r='#FF0000'>bit FAST PAGE MODE CMOS r='#FF0000'>dynamic rAMr>128K r='#FF0000'>x 16r='#FF0000'>bit high performance fasr page mode CMOS r='#FF0000'>dynamic rAMr>
File Size 137.65K  /  18 Page

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    Infineonr>SIEMENS[Siemens Semiconductor Group]r>
Part No. HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HYB314171BJ-70 HYB314171BJ-60 HYB314171BJ-50 HB314171 HYB314171BJ-50-
Description 256k r='#FF0000'>x 16 r='#FF0000'>bit FPM DrAM 3.3 V 60 nsr>-3.3V 256 K r='#FF0000'>x 16-r='#FF0000'>bit r='#FF0000'>dynamic rAM 3.3V Low Power 256 K r='#FF0000'>x 16-r='#FF0000'>bit r='#FF0000'>dynamic rAM with Self refreshr>256k r='#FF0000'>x 16 r='#FF0000'>bit FPM DrAM 3.3 V 70 nsr>From old datasheet systemr>
File Size 1,337.62K  /  24 Page

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    OKI SEMICONDUCTOr CO., LTD.r>
Part No. MK31VT864A-8YC
Description 8388608 Word r='#FF0000'>x 64 r='#FF0000'>bit Synchronous r='#FF0000'>dynamic rAM Module (1BANK)(8M字64位同步动态rAM模块)r>8388608 Word r='#FF0000'>x 64 r='#FF0000'>bit Synchronous r='#FF0000'>dynamic rAM Module (1BANK)(8M字4位同步动态rAM模块)r>From old datasheet systemr>
File Size 77.40K  /  11 Page

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For 1048576word x 32 bit dynamic r Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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