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13ghz Datasheet PDF File

For 13ghz Found Datasheets File :: 1098 Search Time::1.172ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	MGF0911A 0911A
OCR Text	...iers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=41dBm(TYP) * High power gain...3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz ...
Description	From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
File Size	21.84K / 3 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0911A_1 MGF0911A MGF0911A1
OCR Text	...iers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=41dBm(TYP) * High power gain...3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz ...
Description	L, S BAND POWER GaAs FET
File Size	28.87K / 4 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2533
OCR Text	1 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global ...3ghz 14.4ghz 15.4ghz 38 39 40 41 42 43 44 45 12 12.5 13 13.5 14 14.5 15 15.5 16 output toi (dbm) fre...
Description	Ku-Band Power Amplifier
File Size	436.21K / 11 Page	View it Online	Download Datasheet

				Semtech Corporation
Part No.	SFC2309-200
OCR Text	... Circuit 10x Revision 06/11/03 1 5 x 5 Grid Flip Chip (Ball Side View) www.semtech.com SFC2309-200 PROTECTION PRODUCTS Absolute Max...3GHz. The analyzer's source (RS) impedance is equal to the load (RL) impedance which is equal to 50....
Description	From old datasheet system Flip Chip TVS Diode with T-Filter for Color LCD Interface Protection
File Size	486.94K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0910A_1 MGF0910A MGF0910A1
OCR Text	...iers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=38dBm(TYP) * High power gain...3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz ...
Description	L, S BAND POWER GaAs FET
File Size	176.99K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0909A_1 MGF0909A MGF0909A1
OCR Text	... QUALITY * GG * Vds=10V * Ids=1.3A * Rg=100 1.650.1 RECOMMENDED BIAS CONDITIONS 5.0 9.0*}0.2 Absolute maximum ratings Symb...3GHz -2.0 37.0 10.0 - Limits Typ. -1.5 38.0 45 11.0 Max. 5.0 -5.0 9 Unit A V S dBm % dB C/W ...
Description	L,S BAND POWER GaAs FET
File Size	34.07K / 3 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2527-SM
OCR Text	1 1 - 1 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digita...3ghz 14.4ghz 15.4ghz tga 2527 - sm ku - band power amplifier preliminary data sheet:...
Description	Ku-Band Power Amplifier
File Size	518.56K / 13 Page	View it Online	Download Datasheet

				CRYSTEK CORPORATION
Part No.	CATTEN-0100 CATTEN-0150 CATTEN-06R0 CATTEN-05R0 CATTEN-01R0 CATTEN-03R0 CATTEN-08R0 CATTEN-0200 CATTEN-07R0 CATTEN-02R0 CATTEN-09R0
OCR Text	... to +85C 0.5 Watt Max DC - 3GHz 1:1.3 Max 50 Ohms 1-20 dB, 1 dB Actual Size The Attenuator Series offers end users a rugged SMA attenuator housing for easy connection. Attenuators are available from 1dB to 20dB with 1 Watt power dissi...
Description	20dB Attenuator SMA 50 Ohm DC to 3GHz
File Size	297.77K / 2 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Limited
Part No.	MB508
OCR Text	...or 512/514. The output level is 1.6V peak to peak ECL level. The ultra high frequency operation provides wide application, such as Direct Br...3GHz max. (PIN = -4dBm min.) VIN = 100mVp-p (fIN = 100MHz to 1.8GHz) 128/130, 256/258, 512/514 120mW...
Description	2.3GHz TWO MODULUS PRESCALER
File Size	93.12K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	MGFS45V2123 S452123
OCR Text	1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarant...
Description	2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
File Size	24.72K / 2 Page	View it Online	Download Datasheet

For 13ghz Found Datasheets File :: 1098 Search Time::1.172ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |