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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXTS1000E6TC ZXTS1000E6 ZXTS1000E6TA
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| OCR Text |
...* I F =750mA* I F =1000mA* I F =1500ma* V R =30V f=1MHz,V R =30V switched from IF = 500mA to I R = 500mA Measured at IR = 50mA
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
*Measured under pulsed conditions.
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| Description |
Schottky & Low Sat Transistor
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE
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| File Size |
193.46K /
6 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZLLS500TC ZLLS500 ZLLS500TA
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| OCR Text |
...* I F =750mA* I F =1000mA* I F =1500ma* I F =500mA*,Ta = 100 C V R =30V V R =30V,Ta = 85 C f=1MHz,VR=30V Switched from IF = 500mA to VR = 5V. Measured @ IR 50mA. di / d t > 1A / ns. Rsource = 6 ohm.
*Measured under pulsed conditions.
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| Description |
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
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| File Size |
314.64K /
6 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZLLS2000 ZLLS1000TA ZLLS1000TC
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| OCR Text |
...* I F =750mA* I F =1000mA* I F =1500ma* I F =1000mA* I F =2000mA*,Ta = 100 C V R =30V f=1MHz,VR=30V Switched from IF = 500mA to VR = 5V. Measured @ IR 50mA. di / d t > 1A / ns. Rsource = 6 ohm.
*Measured under pulsed conditions.
Opera... |
| Description |
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
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| File Size |
286.09K /
6 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZLLS2000_07 ZLLS2000 ZLLS2000TA ZLLS2000TC ZLLS200007
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| OCR Text |
...* I F =500mA* I F =1000mA* I F =1500ma* I F =2000mA* I F =3000mA* I F =2000mA*,Ta = 100 C V R =30V V R =30V, Ta=85 C f=1MHz,V R =30V Switched from IF = 500mA to VR = 5.5V Measured @ IR 50mA. di / d t > 500mA / ns. Rsource = 6 ; Rload= 10
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| Description |
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
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| File Size |
155.79K /
7 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZLLS1000TC ZLLS1000 ZLLS1000TA
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| OCR Text |
...* I F =750mA* I F =1000mA* I F =1500ma* I F =1000mA*,Ta = 100 C V R =30V V R =30V,Ta = 85 C f=1MHz,VR=30V Switched from IF = 500mA to VR = 5V. Measured @ IR 50mA. di / d t > 1A / ns. Rsource = 6 ohm.
*Measured under pulsed conditions.
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| Description |
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
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| File Size |
310.94K /
6 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZHCS400_07 ZHCS400 ZHCS400-07
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| OCR Text |
...0mA I F =750mA I F =1000mA I F =1500ma I F =500mA, T amb =100C V R =30V f=1MHz,V R =25V switched from I F = 500mA to I R = 500mA Measured at I R = 50mA
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
ISSUE 4 - MA... |
| Description |
SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
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| File Size |
123.80K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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