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Nippon Precision Circuits Inc
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| Part No. |
SM5907AF
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| OCR Text |
...cted from 4 options (4M, 4Mx 2, 16M, 16Mx 2). It operates from a 2.4 to 3.6 V supply voltage range.
Features
- 2-channel processing - Serial data input 2s complement, 16-bit/MSB first, right-justified format Wide capture function (up ... |
| Description |
IC,CD-PLAYER SUPPORT CIRCUIT,CMOS,QFP,44PIN,PLASTIC
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| File Size |
200.30K /
30 Page |
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Hynix
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| Part No. |
HY5MS7B2BLF
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| OCR Text |
... 11 mobile ddr sdram 51 2mbit (16m x 32bit) hy5ms7b2blf(p) series features summary ...bit cmos low power double da ta rate synchronous dram (mobile ddr sdram), ideally suited for mobile... |
| Description |
Mobile DDR SDRAM 512M
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| File Size |
1,600.75K /
61 Page |
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it Online |
Download Datasheet |
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Silicon Integrated System
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| Part No. |
SIS5502 SIS5503
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| OCR Text |
... - supports 256k/512k/1m/2m/4m/16m xn 70ns fast page mode and edo dram - the fastest burst cycle speed for fp and edo are 6-3-3-3 and 6-...bit wide. the sis5501 supports the pipelined addressing mode of the pentium/p54c cpu by issuing the ... |
| Description |
(SIS5501 - SIS5503) PCI Local Data Buffer
(SIS5501 - SIS5503) PCI System I/O
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| File Size |
655.43K /
137 Page |
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Download Datasheet |
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Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
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| Part No. |
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB3164400AT-50 HYB3164400AT-40 HYB3165400ATL-40 HYB3165400AT-40 HYB3164400ATL-40 HYB3165400AJ-60
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| OCR Text |
...age mode cycle time 30 35 40 ns 16m x 4-bit dynamic ram advanced information hyb 3164400aj/at(l) -40/-50/-60 hyb 3165400aj/at(l) -40/-50/-60 (4k & 8k refresh)
semiconductor group 2 hyb3164(5)400aj/at(l)-40/-50/-60 16m x 4-dram this device... |
| Description |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
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| File Size |
252.48K /
26 Page |
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it Online |
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Price and Availability
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