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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM5359-45SL
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| OCR Text |
...VDS= 3V IDS= 11.0A VDS= 3V IDS= 170ma VDS= 3V VGS= 0V IGS= -500A Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringe... |
| Description |
MICROWAVE SEMICONDUCTOR
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| File Size |
110.62K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM6472-45SL
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| OCR Text |
...VDS= 3V IDS= 11.0A VDS= 3V IDS= 170ma VDS= 3V VGS= 0V IGS= -500A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2
u The information contained herein is presented only as a guide for the applicatio... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
506.76K /
4 Page |
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it Online |
Download Datasheet |
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MIMIX[Mimix Broadband]
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| Part No. |
XP1008
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| OCR Text |
...t Vd(1,2,3)=5.0V, Id1=75mA, Id2=170ma, and Id3=680mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage... |
| Description |
11.0-16.0 GHz GaAs MMIC Power Amplifier
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| File Size |
156.31K /
6 Page |
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it Online |
Download Datasheet |
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