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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text ...30 900 280 Max. 20 35 -3 -1 uA -25 100 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source...P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    AM2729-110 2713

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. AM2729-110 2713
OCR Text ...OLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 100C) 438 12 48 250 - 65 to +200 W A V C C Col...
Description S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
From old datasheet system

File Size 60.77K  /  4 Page

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    AM2729-125

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. AM2729-125
OCR Text ...OLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 75C) 500 16 45 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pul...
Description RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

File Size 108.68K  /  6 Page

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