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  400v n-channel b-fet substitut Datasheet PDF File

For 400v n-channel b-fet substitut Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
Description TMOS E-FET High Energy Power FET n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
Description TMOS E-FET High Energy Power FET n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
Description TMOS E-FET High Energy Power FET n-channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00

NEC[NEC]
Part No. 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)

File Size 64.46K  /  6 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RFH12N40 RFH12N35
Description 12A, 350V and 400v, 0.380 Ohm, n-channel Power MOSFETs 12 A, 350 V, 0.38 ohm, n-channel, Si, POWER, MOSFET, TO-218AC
12A/ 350V and 400v/ 0.380 Ohm/ n-channel Power MOSFETs

File Size 39.96K  /  5 Page

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    MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D
Description From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 261.84K  /  10 Page

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    MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system

File Size 270.78K  /  10 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
Description TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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    MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system

File Size 273.51K  /  10 Page

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    MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422
Description From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 71.75K  /  4 Page

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For 400v n-channel b-fet substitut Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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