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4194304-word Datasheet PDF File

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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP-7
OCR Text	...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 13...
Description	256M Synchronous DRAM
File Size	264.65K / 49 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M465400DTP-5
OCR Text	...am fast page mode 67108864-bit (4194304-word by 16-bit) dynamic ram m5m467400/465400dj,dtp -5,-6,-5s,-6s m5m467800/465800dj,dtp -5,-6,-5s,-6s m5m465160dj,dtp -5,-6,-5s,-6s mitsubishi electric aug. 1999 mitsubishi lsis (rev. 1.0) 1 standard...
Description	FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
File Size	251.55K / 37 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM5264805FTT-B60 HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 HM5264165FLTT-75 HM5264165FLTT-A60 HM5264165FLTT-B60 HM5264165FTT-75 HM5264165FTT-A60 HM5264165FTT-B60 HM5264405F HM5264405FLTT-75 HM5264405FLTT-A60 HM5264405FLTT-B60 HM5264405FTT-75 HM5264405FTT-A60 HM5264405FTT-B60 HM5264805F HM5264805F-75 HM5264805F-A60 HM5264805F-B60 HM5264805FLTT-75 HM5264805FLTT-A60 HM5264805FLTT-B60 HM5264805FTT-75 HM5264805FTT-A60
OCR Text	...is a 64-Mbit SDRAM organized as 4194304-word x 4-bit x 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II. Features * * * * * * * * 3.3 V power supply Clo...
Description	64M LVTTL interface SDRAM 133 MHz/100 MHz
File Size	860.04K / 67 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V56S20AKT M2V56S20AKT-5 M2V56S20AKT-6 M2V56S20AKT-7 M2V56S30AKT-5 M2V56S30AKT-6 M2V56S30AKT-7 M2V56S40AKT-5 M2V56S40AKT-6 M2V56S40AKT-7
OCR Text	...-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40 AKT achieve very high speed data rate up to 100MHz (-7) , 133...
Description	256M Synchronous DRAM
File Size	680.49K / 49 Page	View it Online	Download Datasheet

				hitachi
Part No.	5164165A
OCR Text	4194304-word x 16-bit Dynamic RAM ADE-203-453 (Z) Preliminary Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304word x 16-bit. They employ the most advanced C...
Description	4,194,304-Word ′ 6-Bit Dynamic Random Access Memory From old datasheet system
File Size	514.36K / 38 Page	View it Online	Download Datasheet

				http://
Part No.	HM5264405FTT-75 HM5264805FTT-75
OCR Text	...is a 64-mbit sdram organized as 4194304-word 4-bit 4 bank. all inputs and outputs are referred to the rising edge of the clock input. it is packaged in standard 54-pin plastic tsop ii. features 3.3 v power supply clock frequency...
Description	64M LVTTL interface SDRAM 133 MHz/100 MHz
File Size	875.10K / 67 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20
OCR Text	...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 13...
Description	256M Synchronous DRAM From old datasheet system
File Size	238.59K / 49 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V56S40ATP-7 M2V56S40ATP-6 M2V56S40ATP-5 M2V56S20ATP-7 M2V56S20ATP-6 M2V56S20ATP M2V56S30ATP-5 M2V56S30ATP-6
OCR Text	...-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40ATP achieve very high speed data rate up to 100MHz (-7) , 133M...
Description	256M Synchronous DRAM
File Size	614.85K / 49 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TC58FVM5B3AXB65 TC58FVM5B3AFT65 TC58FVM5T3AXB65 TC58FVM5T2AXB65 TC58FVM5B2AFT65 TC58FVM5T2AFT65 TC58FVM5T3AFT65
OCR Text	...able flash memory organized as 4194304 words 8 bits or as 2097152 words 16 bits. the tc58fvm5t2a/b2a/t3a/b3 a features commands for ...word modes ? block erase architecture 8 8 kbytes/63 64 kbytes ? boot block architecture ...
Description	东芝马鞍山数字集成电路硅栅CMOS 32MBIT (4M 8 BITS/2M 16 BITS) CMOS FLASH MEMORY
File Size	792.13K / 63 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V56S40AKT-7 M2V56S40AKT-6 M2V56S20AKT-7 M2V56S20AKT-6 M2V56S20AKT-5 M2V56S20AKT M2V56S30AKT-5 M2V56S40AKT-5
OCR Text	...-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40 AKT achieve very high speed data rate up to 100MHz (-7) , 133...
Description	256M Synchronous DRAM
File Size	615.84K / 49 Page	View it Online	Download Datasheet

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