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For 42m Found Datasheets File :: 267 Search Time::6.156ms
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				Superworld Electronics
Part No.	SPS5020FT150M SPS5020FT100M SPS5020FT1R0N SPS5020FT1R2N SPS5020FT1R5N SPS5020FT220M SPS5020FT2R2N SPS5020FT330M SPS5020FT3R3N SPS5020FT3R9N SPS5020FT4R7M SPS5020FT6R8M
OCR Text	...90 0.1v/1m sps5020ft2r2n 2.230% 42m 3.6 2.80 0.1v/1m sps5020ft3r3n 3.330% 61m 3.2 2.50 0.1v/1m sps5020ft3r9n 3.930% 74m 3.2 2.30 0.1v/1m 20.03.2012 low profile power inductors note : specifications subject to change without notice. please c...
Description	Low Profile Power Inductors
File Size	235.90K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semiconductor...
Part No.	AO460409
OCR Text	... < 52m ? (v gs = -10v) < 42m ? (v gs =4.5v) < 87m ? (v gs = -4.5v) 100% rg tested! general description the ao4604 uses advanced trench technology mosfets to provide excelle n r ds(...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	334.99K / 9 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4604
OCR Text	... < 52m ? (v gs = 10v) < 42m ? (v gs =4.5v) < 87m ? (v gs = 4.5v) the ao4604 uses advanced trench technology mosfets to provide excellen t r ds(on) and low gate charge. the complementary mosfets may be used in power in...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	685.66K / 9 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4606
OCR Text	... < 35 m ? ( v gs = 10 v) < 42m ? (v gs =4.5v) < 58 m ? ( v gs = 4.5 v) the ao460 6 uses advanced trench technology mosfets to provide excellen t r ds(on) and low gate charge. the complementary mosfets may be used to f...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	655.91K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4606 AO460612
OCR Text	...10v) < 28m (vgs=-10v) < 42m (v gs =4.5v) < 44m (vgs=-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested the ao4606 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate cha...
Description	30V Complementary MOSFET
File Size	543.26K / 9 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4607
OCR Text	... < 35m ? (v gs = - 10v) < 42m ? (v gs =4.5v) < 58m ? (v gs = - 4.5v) schottky vds (v) = 30v, if = 3a, vf<0.5v@1a the ao4607 uses advanced trench technology mosfets to provide excelle n r ds(on) and low gate charge. the ...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	407.02K / 8 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4611
OCR Text	...< 25m w (v gs =10v) < 42m w (v gs = -10v) < 30m w (v gs =4.5v) < 52m w (v gs = -4.5v) the ao4611 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets ma...
Description	60V Dual P N-Channel MOSFET
File Size	595.48K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4611 AO461110
OCR Text	...< 25m w (v gs =10v) < 42m w (v gs = -10v) < 30m w (v gs =4.5v) < 52m w (v gs = -4.5v) 100% uis tested 100% uis tested 100% rg tested 100% rg tested general description the ao4611 uses advance...
Description	60V Dual P N-Channel MOSFET
File Size	214.61K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors ALPHA AND OMEGA SEMICONDUCTOR
Part No.	AO4812 AO481211
OCR Text	... r ds(on) (at v gs =4.5v) < 42m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl mj junction and storage temperature range -55 to 150 c power...
Description	30V Dual N-Channel MOSFET 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	252.79K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOC2800
OCR Text	... r ss(on) (at v gs =4.5v) < 42m w r ss(on) (at v gs =4.0v) < 44m w r ss(on) (at v gs =3.1v) < 49m w r ss(on) (at v gs =2.5v) < 61m w the aoc2800 uses advanced trench technology to prov ide excellent r ss(on) , low gate charg...
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	241.93K / 5 Page	View it Online	Download Datasheet

For 42m Found Datasheets File :: 267 Search Time::6.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |