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  4mx4 Datasheet PDF File

For 4mx4 Found Datasheets File :: 149    Search Time::0.891ms    
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    International Business Machines, Corp.
Part No. IBM11M8735C
OCR Text ...2 4mx72 banks. the dimm uses 36 4mx4 edo drams in soj packages. the use of edo drams allows for a reduction in page mode cycle time from 40ns (fast page) to 25ns for 60ns dram modules. improved system performance is provided by the on-dimm ...
Description 8M x 72 DRAM Module(8M x 72 动态RAM模块) 8米72内存米72动态内存模块)

File Size 385.21K  /  29 Page

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    IS41C44002C

Integrated Silicon Solution, Inc
Part No. IS41C44002C
OCR Text ...op2 with jedec standard pinout. 4mx4 16mb dram with edo page mode advanced information august 2010 key timing parameters parameter -50 unit ras access time (t r a c ) 50 ns cas access time (t c a c ) 13 ns column ...
Description 16Mb DRAM WITH EDO PAGE MODE

File Size 338.03K  /  19 Page

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    Unisonic Technologies Co., Ltd.
Electronic Theatre Controls, Inc.
Part No. IBM11N4645CB-60J IBM11N4735CB-50J
OCR Text ... dimms use 16 (x64) or 18 (x72) 4mx4 edo drams in soj packages. the use of edo drams allows for a reduction in page mode cycle time from 40ns (fast page) to 20ns for 50ns dram modules. the dimms use serial presence detects imple- mented via...
Description x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块

File Size 448.12K  /  31 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...is available in L-version. This 4mx4 EDO DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, micr...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    Hyundai Electronics
Part No. HY5117404C
OCR Text 4mx4, extended data out mode this family is a 16m bit dynamic ram organized 4,194,304 x 4-bit configuration with extended data out mode cmos drams . extended data out mode is a kind of page mode which is useful for the read operation. the c...
Description (HY5116404C / HY5117404C) Extended Data Out Mode

File Size 282.77K  /  9 Page

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