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  5-ghz Datasheet PDF File

For 5-ghz Found Datasheets File :: 27843    Search Time::1.937ms    
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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text 5 - 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P 1 dB at 4 GHz * Hermetic G...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text 5 - 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features * High Output Power: 20.5 dBm Typical P1 dB at 4 GHz * Low Noise Figure: 1.0 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * Herme...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text 5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features * High Output Power: 19.0 Bm Typical P 1 dB at 4 GHz * High Gain: 12.5 dB Typical G 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effect...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-26836 ATF-26836-STR ATF-26836-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text ... Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA Power Outpu...GHz f = 12.0 GHz f = 12.0 GHz Units dB dB dB 15.0 15 30 -3.5 Min. 7.0 Typ. Max. 9.0 2.2 6.0 18.0 35 ...
Description 2-16 GHz General Purpose Gallium Arsenide FET

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    ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text ... Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA Power Outpu...GHz f = 12.0 GHz f = 12.0 GHz Units dB dB dB 15.0 15 30 -3.5 Min. 7.0 Typ. Max. 9.0 2.2 6.0 18.0 35 ...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 39.76K  /  4 Page

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    ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33

ETC
HP[Agilent(Hewlett-Packard)]
Part No. ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text ... 1.9 GHz; 4 V, 60 mA (Typ.) * 0.5 dB Noise Figure * 17.5 dB Associated Gain * 20 dBm Output Power at 1 dB Gain Compression * 31.5 dBm Output 3rd Order Intercept SOURCE 4Px DRAIN SOURCE GATE Note: Top View. Package marking ...
Description 评估板,亚欧信托基金X14300兆赫930-1990兆赫频率
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text ...ogy * Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low Parasitic Ceramic Microstrip Package * Tape-and-Reel Packing Option Available Des...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text 5 - 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features * Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz * Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz * Maximum Ava...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text ...igh Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally .5 micron gate length GaAs FET is an interdigitated four-cell str...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text ...kage range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between...GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters a...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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For 5-ghz Found Datasheets File :: 27843    Search Time::1.937ms    
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