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  52.0v. Datasheet PDF File

For 52.0v. Found Datasheets File :: 592    Search Time::1.516ms    
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    HFS10N65S

SemiHow Co.,Ltd.
Part No. HFS10N65S
OCR Text ... ? q g total gate charge v ds = 520v, i d = 9.2 a, v gs = 10 v (note 4,5) -- 29 38 nc q gs gate - source charge -- 6.8 -- nc q gd gate - drain charge -- 10.3 -- nc switching characteristics source - drain diode maximum ratings and character...
Description 650V N-Channel MOSFET

File Size 877.94K  /  7 Page

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    HFP8N65S

SemiHow Co.,Ltd.
Part No. HFP8N65S
OCR Text ...29 --- nC nC nC VDS = 520V, ID = 7.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 842.20K  /  8 Page

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    HFS8N65S

SemiHow Co.,Ltd.
Part No. HFS8N65S
OCR Text ...29 --- nC nC nC VDS = 520V, ID = 7.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 784.25K  /  7 Page

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    SPGN0365A SPGP0365A

SemiHow Co.,Ltd.
Part No. SPGN0365A SPGP0365A
OCR Text ...ds = 325v v ds = 130v v ds = 520v * note : i d = 3.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * ...
Description The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.

File Size 1,548.36K  /  11 Page

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    HFP4N65

SemiHow Co.,Ltd.
Part No. HFP4N65
OCR Text ... ? q g total gate charge v ds = 520v, i d = 3.6 a, v gs = 10 v (note 4,5) -- 15 20 nc q gs gate - source charge -- 3.2 -- nc q gd gate - drain charge -- 6.8 -- nc switching characteristics source - drain diode maximum ratings and characteri...
Description 650V N-Channel MOSFET

File Size 771.48K  /  8 Page

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    HFS5N65S

SemiHow Co.,Ltd.
Part No. HFS5N65S
OCR Text ....5 --- nC nC nC VDS = 520V, ID = 4.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 774.03K  /  7 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP2761R-A
OCR Text ...480V, VGS=0V VGS=30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10,VGS=10V RD=32 VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off De...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 55.94K  /  4 Page

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    15N60L-T47-T 15N60G-T47-T

Unisonic Technologies
Part No. 15N60L-T47-T 15N60G-T47-T
OCR Text ...Source Leakage Current IDSS VDS=520V, TC=125C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VG...
Description 15 Amps, 600 Volts N-CHANNEL MOSFET

File Size 157.28K  /  6 Page

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    15N65L-T47-T 15N65G-T47-T 15N65L-TF1-T 15N65G-TF1-T

Unisonic Technologies
Part No. 15N65L-T47-T 15N65G-T47-T 15N65L-TF1-T 15N65G-TF1-T
OCR Text ...Source Leakage Current IDSS VDS=520V, TC=125C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VG...
Description 15 Amps, 650 Volts N-CHANNEL MOSFET

File Size 162.81K  /  7 Page

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    http://
Part No. SSD02N65
OCR Text ...nt i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 6.3 8 v gs =10v, i d =1a total gate charge q g - 8 - nc i d =1a v ds =520v v gs =10v gate-source charge q gs - 2.56 ...
Description 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET

File Size 1,443.51K  /  4 Page

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