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  60ns Datasheet PDF File

For 60ns Found Datasheets File :: 1946    Search Time::2.297ms    
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    HMD4M36M3EG HMD4M36M3EG-5 HMD4M36M3EG-6 HMD4M36M3E

HANBIT[Hanbit Electronics Co.,Ltd]
Part No. HMD4M36M3EG HMD4M36M3EG-5 HMD4M36M3EG-6 HMD4M36M3E
OCR Text ... Ref, Gold w Access times : 50, 60ns w High-density 16MByte design w Single +5V 0.5V power supply wJEDEC standard pinout w EDO Mode operation w TTL compatible inputs and outputs w FR4-PCB design PIN 1 2 3 4 5 6 7 8 9 10 11 12 -5 -6 M 13 14 ...
Description 16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V

File Size 49.93K  /  6 Page

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    GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS17403C-7 GM71CS17403CL-5 GM71CS17403CL-6 GM71CS17403CL-7 GM71C17403CCL

Hynix Semiconductor Inc.
Part No. GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS17403C-7 GM71CS17403CL-5 GM71CS17403CL-6 GM71CS17403CL-7 GM71C17403CCL
OCR Text ...03CT/CLT-7 Access Time 50ns 60ns 70ns 50ns 60ns 70ns Package 300 Mil 24(26) Pin Plastic SOJ 300 Mil 24(26) Pin Plastic TSOP II Absolute Maximum Ratings* Symbol TA TSTG VIN/VOUT VCC IOUT PD Parameter Ambient Temperature under Bi...
Description LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

File Size 96.47K  /  10 Page

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    DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9K1208U0A K9K1208U0A K9K1208U0C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9K1208U0A K9K1208U0A K9K1208U0C
OCR Text ...0s(Max.) - Serial Page Access : 60ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transi...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet

File Size 356.63K  /  27 Page

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    International Business Machines, Corp.
Part No. IBM0116400M
OCR Text ...4 1 ibm0116400j3 -60 sp no 5.0v 60ns 400mil soj 28/24 1 ibm0116400j1 -50 sp no 5.0v 50ns 300mil soj 26/24 1 ibm0116400j1 -60 sp no 5.0v 60ns 300mil soj 26/24 1 ibm0116400t1 -50 sp no 5.0v 50ns 300mil tsop 26/24 1 ibm0116400t1 -60 sp no 5.0v...
Description 4M x 4 12/10 DRAM(16M动态RAM(带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日的DRAM,600位动态随机存储器(带22条地址线,其中12条为行地址选通,10条为列地址选通)

File Size 327.92K  /  28 Page

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    Directed Energy
Part No. PVX-4110
OCR Text ...to 10, 000v pulse output <60ns rise and fall time s < 20 0ns to dc pulse width optimized to drive deflection plates , grids and other capacitive loads protected against arcs, short circuits and load transients ...
Description 0,000V PULSE GENERATOR
ATMEGA644V-10AU & AT86RF230-ZU(AVRZLINK)

File Size 76.98K  /  2 Page

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    K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C
OCR Text ... 10ns Min. 15ns K9K1208U0M Min. 60ns Min. 60ns Min. 25ns Min. 15ns Min. 25ns Draft Date June 19th 2000 Remark Preliminary 0.1 1. Changed Input / Output Capacitance - Input / Output Capacitance (Max.) : 20 pF --> 30pF - Input C...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory

File Size 351.33K  /  26 Page

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    Directed Energy
Part No. PVX-4140
OCR Text ... 25ns rise and fall times ? 60ns to dc pulse width ? >30khz pulse repetition frequency ? optimized to drive deflection plates, grids, pockels cells and other capacitive loads ? protected against arcs, shorts and load transients ...
Description ,500V PULSE GENERATOR
ATMEGA64 IN UNSAWN WAFER 7 MIL(MCU AVR)

File Size 59.48K  /  2 Page

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    Directed Energy
Part No. PVX-4150
OCR Text ...output <25nsriseandfalltimes <60ns to dc pulse width >240khz pulse repetition frequency optimizedtodrivedeflectionplates, grids and other capacitive loads protected against arcs, shorts and load transients voltage and current monitor ...
Description ,500V PULSE GENERATOR
16MHZ, TQFP, COM TEMP(MCU AVR)

File Size 70.43K  /  2 Page

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    International Business Machines, Corp.
Part No. IBM11M8735C
OCR Text ...om 40ns (fast page) to 25ns for 60ns dram modules. improved system performance is provided by the on-dimm buffering of selected input signals. the specified timings include all buffer, net and skew delays, which simplifies the memory subsys...
Description 8M x 72 DRAM Module(8M x 72 动态RAM模块) 8米72内存米72动态内存模块)

File Size 385.21K  /  29 Page

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    IBM Microeletronics
International Business Machines, Corp.
Part No. IBM0116405P IBM0116405B
OCR Text ...4 1 ibm0116405t1 -60 sp no 5.0v 60ns 300mil tsop-ii 26/24 1 ibm0116405bt1 -50 sp no 3.3v 50ns 300mil tsop-ii 26/24 1 ibm0116405bt1 -60 sp no 3.3v 60ns 300mil tsop-ii 26/24 1 ibm0116405j1 -50 sp no 5.0v 50ns 300mil soj 26/24 1 ibm0116405j1 -...
Description 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)
4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)

File Size 379.10K  /  31 Page

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For 60ns Found Datasheets File :: 1946    Search Time::2.297ms    
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