| Description |
0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>8兆位,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>5240000'>80000'>8 0000'>x 16位).0伏的0000'>cmos只,扇区擦除闪存 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 90 ns, PDSO40000'>8 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 90 ns, PDSO44 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 10000'>50 ns, PDSO44 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 70 ns, PDSO40000'>8 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 70 ns, PDSO44 0000'>8 Mega0000'>bit (1,040000'>8,0000'>576 0000'>x 0000'>8-0000'>bit/0000'>524,20000'>80000'>8 0000'>x 16-0000'>bit) 0000'>cmos 0000'>5.0 volt-only, Sector Erase Flash Memory 0000'>512K 0000'>x 16 FLASH 0000'>5V PROM, 10000'>50 ns, PDSO40000'>8
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