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6a 12a Datasheet PDF File

For 6a 12a Found Datasheets File :: 2392 Search Time::0.812ms
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				Infineon Technologies AG
Part No.	IDP12E120
OCR Text	... IF 20 16 12 12a 1.6 6a 1.4 8 4 0 0 1.2 0.5 1 1.5 2 V VF 3 1 -60 -20 20 60 100 160 C Tj Rev.2.3 Page 4 2009-08-19 IDP12E120 5 Typ. reverse recovery time trr = f (diF/dt) parame...
Description	Fast Switching Diode
File Size	390.30K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IGP03N120H208 IGW03N120H2
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 10s 1A 50s 100s 0,1A 500s DC 2A Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz ,01A 1V ...12a 60W 10A 50W IC, COLLECTOR CURRENT 50C 75C 100C 125C POWER DISSIPATION 40W 8A...
Description	HighSpeed 2-Technology
File Size	340.03K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKA06N60T Q67040S4678
OCR Text	...n.com/igbt/ VCE 600V IC;Tc=100C 6a VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K06T60 E P-TO-220-3-31 (TO-220 FullPak) Type IKA06...12a 15V 13V IC, COLLECTOR CURRENT 12a 15V 13V 9A 11V 9V 9A 11V 9V 6a 7...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	351.04K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKP03N120H208
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 10s 1A 50s 100s 0,1A 500s DC 2A Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz 0,01A 1V...12a 60W 10A 50W IC, COLLECTOR CURRENT 50C 75C 100C 125C POWER DISSIPATION 40W 8A...
Description	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	375.48K / 15 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMT8012LFG-13 DMT8012LFG-7 DMT8012LFG-15
OCR Text	...a ? 14 22 v gs = 6v, i d = 6a diode forward voltage v sd ? 0.9 1.2 v v gs = 0v, i s = 12a dynamic characteristics (note 7) input capacitance c iss ? 1949 ? pf v ds = 40v, v gs = 0v, f = 1mhz output capacitance ...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	261.51K / 6 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	IKB06N60T
OCR Text	.../igbt/ VCE 600V 600V IC;Tc=100C 6a 6a VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C E P-TO-263-3-2 (D-PAK) (TO-263AB) Type IKP06N60T I...12a 9A 6a 3A 0A 100H z T C =110C 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 1A 5...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	367.67K / 14 Page	View it Online	Download Datasheet

				ETC
Part No.	SSR24C50CT SSR24C50CTG SSR24C50CTGTX SSR24C50CTGTXV
OCR Text	...(TJ = 25oC, 300sec Pulse ) IF = 6a IF = 12a SYMBOL VF1 VF2 VF3 MIN ---- TYP 1.30 1.70 1.30 1.70 1.30 1.60 100 400 200 26 MAX 1.38 1.90 1.35 1.85 1.40 1.68 200 1000 - UNITS Volts Volts Volts A A pF nC Instantaneous Forward ...
Description	24 AMP 600 VOLTS SCHOTTKY SILICON CARBIDE CENTER TAP RECTIFIER
File Size	19.38K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2N5990 2N5991 2N5989
OCR Text	...EO Collector cut-off current IC=6a ;IB=0.6a IC=12a; IB=1.8A IC=12a; IB=1.8A IC=6a ; VCE=2V VCE=20V; IB=0 VCE=30V; IB=0 VCE=40V; IB=0 IC=0.2A ;IB=0 2N5989 2N5990 2N5991 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V ...
Description	Silicon NPN Power Transistors
File Size	118.82K / 3 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	ECH8410
OCR Text	...=0V VDS=10V, ID=1mA VDS=10V, ID=6a ID=6a, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.2 7.5 7.5 13 15.5 10 18.2 22 Ratings min 30 1 10 2.6 typ m...12a VDS=15V, VGS=10V, ID=12a VDS=15V, VGS=10V, ID=12a IS=12a, VGS=0V Ratings min typ 1700 300 200 17...
Description	General-Purpose Switching Device Applications
File Size	283.52K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA76619D3S HUFA76619D3
OCR Text	...MBOL VSD trr QRR ISD =12a ISD = 6a Reverse Recovery Time Reverse Recovered Charge ISD = 12a, dISD/dt = 100A/s ISD = 12a, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 1.0 101 333 UNITS V V ns nC (c)2001 Fairchild Semiconductor Corpor...
Description	18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
File Size	212.57K / 10 Page	View it Online	Download Datasheet

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