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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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Part No. |
2SC5998YC 2SC5998
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OCR Text |
..., IC= 100 mA, f = 500 MHz Power added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz * High Collector to Emitter Voltage VCEO = 5 V * Ideal for up to 2GHz applications. e.g FRS(Family Radio Service) Power Amplifier , GMRS (General ... |
Description |
Octal LNA/VGA/AAF/ADC and Crosspoint Switch; Package: TQFP w/ 9.5mm exposed pad; No of Pins: 100; Temperature Range: Industrial Silicon NPN Epitaxial High Frequency Medium Power Amplifier
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File Size |
92.66K /
11 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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Part No. |
K1B6416B6C
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OCR Text |
...OF WRITE CYCLE(1)" in page 23 - added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measured after 60ms from the time when standby mo... |
Description |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
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File Size |
765.70K /
46 Page |
View
it Online |
Download Datasheet
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Price and Availability
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