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  dc-9ghz Datasheet PDF File

For dc-9ghz Found Datasheets File :: 559    Search Time::0.937ms    
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    BFP180W

Infineon Technologies AG
Part No. BFP180W
OCR Text ... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...9GHz VCE = Parameter 20 dB 10V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description NPN Silicon RF Transistor

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    BFP182R

Infineon Technologies AG
Part No. BFP182R
OCR Text ... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...9GHz VCE = Parameter 23 dB 10V 8V 5V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Paramete...
Description NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

File Size 86.41K  /  7 Page

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    BFP182W

Infineon Technologies AG
Part No. BFP182W
OCR Text ... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...9GHz VCE = Parameter 24 dB 10V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

File Size 76.44K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFR183T
OCR Text ... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 10V dB ...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFR183W
OCR Text ... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 13 dB 10V ...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers

File Size 78.50K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFR183W Q62702-F1493
OCR Text ...pecified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 10...9GHz VCE = Parameter 20 dB 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 11 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system

File Size 56.46K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFR183 Q62702-F1316
OCR Text ...pecified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 10...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 10V dB dB...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

File Size 56.96K  /  7 Page

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    Q62702-F1321 BFG194

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. Q62702-F1321 BFG194
OCR Text ...pecified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 10...9GHz VCE = Parameter 12 5V dB 10V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 7.0 1...
Description From old datasheet system
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

File Size 65.58K  /  7 Page

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    FMM5049VT

Eudyna Devices Inc
Part No. FMM5049VT
OCR Text ...e 1) Drain Current Gate Current DC Input Current Note 1 Pin-6dBm Symbol Pout GL IDD IGG IDD(DC) Conditions Min. 39.0 30.0 - Lim...9GHz 2.3 1.9 50 2.1 2.7 2.5 2.3 2.9GHz 2.1 2.5 100 S11 S22 +j100 +90 S21 S12 80 60 2.1 ...
Description POWER AMPLIFIER MMIC

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    Sony, Corp.
Part No. CXG1104TN
OCR Text ...ass: this capacitor is used for dc line filtering. 100pf is recommended. truth table item vctl (h) vctl (l) v dd min. 2.0 0 2.6 ty p. 3.0 ? ...9ghz 900mhz 1.9ghz 900mhz, 1.9ghz ? 1 ? 1 v dd = 3.0v, 0/3v control ? 2 vctl (high) = 3v v dd = 3v...
Description High Power Antenna Switch MMIC(SPDT Switch with Logic Control)For Use In Cellular Handsets(大功率天线开关微波集成电带逻辑控制的单刀双掷开关,用于蜂窝式手机)) 高功率天线单片开关(单刀双掷开关逻辑控制),用于蜂窝手机的使用(大功率天线开关微波集成电路(带逻辑控制的单刀双掷开关,用于蜂窝式手机)
High Power SPDT Switch with Logic Control

File Size 40.37K  /  4 Page

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For dc-9ghz Found Datasheets File :: 559    Search Time::0.937ms    
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