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NXP Semiconductors N.V.
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| Part No. |
BLF7G20L-250P BLF7G20LS-250P
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| OCR Text |
...nce for improved performance in doherty applications ? designed for low memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? compliant to restriction of h... |
| Description |
Power LDMOS transistor
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| File Size |
341.60K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G21L-160P BLF7G21LS-160P
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| OCR Text |
...nce for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding ... |
| Description |
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz
Power LDMOS transistor BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
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| File Size |
134.37K /
15 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G20L-200 BLF7G20LS-200 BLF7G20L-200-15
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| OCR Text |
...nce for improved performance in doherty applications ? designed for low-memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? compliant to restriction of h... |
| Description |
Power LDMOS transistor
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| File Size |
125.78K /
13 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G27LS-40P BLF6G27L-40P
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| OCR Text |
...nce for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding ... |
| Description |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
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| File Size |
155.61K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G27L-90P BLF7G27LS-90P
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| OCR Text |
...nce for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding ... |
| Description |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
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| File Size |
951.03K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLD6G21LS-50 BLD6G21L-50
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| OCR Text |
doherty solution using nxp?s state of the art gen6 ldmos technology. this device is perfectly suited for td-scdma base station applications at frequ encies from 2010 mhz to 2025 mhz. the main and peak device, input splitter and output co... |
| Description |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated doherty transistor
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| File Size |
172.33K /
15 Page |
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it Online |
Download Datasheet |
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Price and Availability
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