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  dual n-channel high density tr Datasheet PDF File

For dual n-channel high density tr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI5512VA-125LB388 ISPLSI5512VA-125LQ208 ISPLSI5512VA-100LQ208 ISPLSI5512VA

Lattice Semiconductor Corporation
Part No. ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI5512VA-125LB388 ISPLSI5512VA-125LQ208 ISPLSI5512VA-100LQ208 ISPLSI5512VA-100LB388 ISPLSI5512VA-125LB272 ISPLSI5512VA-70LQ208 ISPLSI5512VA-110LB388 ISPLSI5512VA-70LB388I
Description Electrically-Erasable Complex PLD
In-System Programmable 3.3V SuperWIDEhigh density PLD
In-System Programmable 3.3V SuperWIDE high density PLD
In-System Programmable 3.3V SuperWIDE?high density PLD

File Size 330.49K  /  26 Page

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    STN1810

Stanson Technology
Part No. STN1810
Description STN1810 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 958.14K  /  7 Page

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    ST2341A

Stanson Technology
Part No. ST2341A
Description ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 577.18K  /  6 Page

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    STP4403

Stanson Technology
Part No. STP4403
Description STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 315.59K  /  6 Page

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    STN4480

Stanson Technology
Part No. STN4480
Description STN4480 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 744.55K  /  6 Page

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    STN4392

Stanson Technology
Part No. STN4392
Description STN4392 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 377.62K  /  7 Page

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    STN4426

Stanson Technology
Part No. STN4426
Description STN4426 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 356.97K  /  6 Page

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    STN4488L

Stanson Technology
Part No. STN4488L
Description STN4488L is the n-channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

File Size 634.35K  /  7 Page

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    STP4435A

Stanson Technology
Part No. STP4435A
Description STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 280.37K  /  6 Page

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    STP9235

Stanson Technology
Part No. STP9235
Description STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 326.22K  /  6 Page

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