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Motorola Mobility Holdings, Inc. Motorola, Inc.
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Part No. |
MFE211 MFE212
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Description |
n-channel dual-GATE silicon-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
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File Size |
423.78K /
5 Page |
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it Online |
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TOSHIBA
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Part No. |
3SK291
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Description |
Field Effect Transistor silicon n-channel dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
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File Size |
184.84K /
6 Page |
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it Online |
Download Datasheet
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TOSHIBA
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Part No. |
3SK249
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Description |
Field Effect Transistor silicon N Channel dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
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File Size |
186.45K /
6 Page |
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it Online |
Download Datasheet
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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Part No. |
PMGD290XN PMGD290XN115 GD290XN115
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Description |
dual n-channel mTrenchMOS extremely low level FET From old datasheet system dual n-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, n-channel, Si, SMALL SIGNAL, MOSFET
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File Size |
85.67K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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