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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ... referenced to a positive clock edge * Two banks can be operated simultaneously and independently * Dual internal bank controlled by A11 (bank select) * Single 3.3V power supply * 2.5V VDD option available * LVTTL interface * Programmable b...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ... referenced to a positive clock edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * S...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ... referenced to a positive clock edge * Internal bank for hiding row access/precharge * Power supply IS42S81600A IS42S16800A IS42S32400A * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: S...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ... referenced to a positive clock edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * S...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text .... Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle except for Block Erase command ...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text .... Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle except for Block Erase command ...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    EM42BM3284LBA-6F EM42BM3284LBA-75F

Eorex Corporation
http://
Part No. EM42BM3284LBA-6F EM42BM3284LBA-75F
OCR Text ... DM are sampled at the positive edge of the system clock. * Data Mask (DM) for write data * Sequential & Interleaved Burst type available * Auto Precharge option for each burst accesses * DQS edge-aligned with data for Read cycles * DQS cen...
Description 1Gb (8M?4Bank?32) Double DATA RATE SDRAM
1Gb (8M×4Bank×32) Double DATA RATE SDRAM

File Size 359.65K  /  24 Page

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    Holtek Semiconductor Inc.
Part No. HT9200B
OCR Text ...) 5.0v the time from ce falling edge to normal oscillator operation 10 ms f osc system frequency crystal=3.5795mhz 3.5759 3.5795 3.5831 mhz ht9200a/ht9200b rev. 1.50 4 april 29, 2013 table 1: digits vs. input data vs. tone output fre...
Description DTMF Generators

File Size 120.66K  /  13 Page

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