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Duracell
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| Part No. |
NE664M04-T2-a
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| OCR Text |
...78m04 ne664m04 ne5520379 a (mos fet ) a 3 9z001 r55 r57 cordless phone f = 0.9 ghz ?3 dbm 9 db m2 5 dbm ne68019 (3-pin tusmm) ne664m04 r57 t h
ne664m04 typical performance curves (t a = 25c) ambient temperature, t a ( o c) total power... |
| Description |
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| File Size |
546.53K /
10 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NE664M04-T2-a
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| OCR Text |
...678m04 ne664m04 ne5520379a (mos fet) a 3 9z001 r55 r57 cordless phone f = 0.9 ghz ?3 dbm 9 dbm 25 dbm ne68019 (3-pin tusmm) ne664m04 r57 t h
ne664m04 typical performance curves (t a = 25 c) ambient temperature, t a ( o c) total powe... |
| Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRaNSISTOR
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| File Size |
202.44K /
10 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NE3508M04-T2-a
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| OCR Text |
...noise amplifier n-channel hj-fet document no. pg10586ej01v0ds (1st edition) date published december 2005 cp(k) printed in japan ? ...a = 14 db typ. @ f = 2 ghz, v ds = 2 v, i d = 10 ma flat-lead 4-pin thin-type super minimold ... |
| Description |
S BaND, Si, N-CHaNNEL, RF SMaLL SIGNaL, Hfet LEaD FREE, SUPER MINIMOLD, M04, 4 PIN
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| File Size |
68.79K /
10 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NE3508M04-T2B-a
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| OCR Text |
...noise amplifier n-channel hj-fet document no. pg10586ej02v0ds (2nd edition) date published october 2008 ns printed in japan 2005, 2...a = 14 db typ. @ f = 2 ghz, v ds = 2 v, i d = 10 ma ? flat-lead 4-pin thin-type super minimold ... |
| Description |
S BaND, Si, N-CHaNNEL, RF SMaLL SIGNaL, Hfet LEaD FREE, THIN, SUPER MINIMOLD PaCKaGE-4
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| File Size |
203.47K /
12 Page |
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it Online |
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Duracell
California Eastern Laboratories
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| Part No. |
UPG2227T5F-a UPG2227T5F-E2-a
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| OCR Text |
fet switch for cdma/pcs/gps triple mode digital cellular telephone application. the device can operate from 500 mhz to 2.5...a caution observe precautions when handling because these devices are sensitive to electrostatic di... |
| Description |
NECs L-BaND SP3T SWITCH
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| File Size |
329.89K /
8 Page |
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it Online |
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| Part No. |
NE5520279a-a
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| OCR Text |
...nted in japan silicon power mos fet ne5520279a 3.2 v operation silicon rf power ldmos fet for 1.8 ghz 1.6 w transmission amplifier...a surface mount package. this device can deliver 32.0 dbm output power with 45% power added efficien... |
| Description |
L BaND, Si, N-CHaNNEL, RF POWER, MOSfet
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| File Size |
64.75K /
9 Page |
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it Online |
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Diodes
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| Part No. |
ZXNB4202Ja16 ZXNB4202Ja16TC ZXNB4202JB16 ZXNB4202JB16TC
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| OCR Text |
...tion provides all the required fet and mixer bias, control detection and decoding, loca l oscillator switching and a stable power supply for the if amplifier and additional support functions. packaged in a small 16 pin package the zxnb o... |
| Description |
Single LNB - Complete Bias, Control and Power Management Solution
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| File Size |
37.30K /
3 Page |
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it Online |
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Price and Availability
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