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gain.collector-base Datasheet PDF File

For gain.collector-base Found Datasheets File :: 42436 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				Fairchild Semiconductor
Part No.	FJV3114R FJV3114RMTF
OCR Text	...i e = 0 0.1 a h fe dc current gain v ce = 5 v, i c = 5 ma 68 v ce (sat) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma 0.3 v f t current gain bandwidth product v ce = 10 v, i c = 5 ma 250 mhz c ob output capacitance...
Description	NPN Epitaxial Silicon Transistor with Bias Resistor
File Size	162.26K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FJV3109R FJV3109RMTF
OCR Text	..., i e =0 0.1 a h fe dc current gain v ce =5v, i c =1ma 100 600 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.3 v c ob output capacitance v cb =10v, i e =0 f=1mhz 3.70 pf f t current gain bandwidth product v ce =10...
Description	Switching Application (Bias Resistor Built In)
File Size	50.52K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD467
OCR Text	...voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO hFE* 85 -- -- -- -- VCE(sat) VBE fT Cob V V MHz pF I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V,...
Description	Silicon NPN Epitaxial
File Size	29.20K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SD468
OCR Text	...voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 -- -- -- -- VCE(sat) VBE fT Cob V V MHz pF Notes: 1. The 2SD468 is grouped by h FE as follows. 2. Pulse test B 85 to170 C...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	29.49K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FJV3106R FJV3106RMTF
OCR Text	..., i e =0 0.1 a h fe dc current gain v ce =5v, i c =5ma 68 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =0.5ma 0.3 v c ob output capacitance v ce =10ma, i e =0 f=1.0mhz 3.7 pf f t current gain bandwidth product v cb =10v,...
Description	Switching circuit, Inverter, Interface circuit, Driver Circuit
File Size	86.69K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FJV3102R FJV3102RMTF
OCR Text	...i e = 0 0.1 a h fe dc current gain v ce = 5 v, i c = 5 ma 30 v ce (sat) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma 0.3 v f t current gain bandwidth product v ce = 10 v, i c = 5 ma 250 mhz c ob output capacitance...
Description	NPN Epitaxial Silicon Transistor with Bias Resistor
File Size	162.26K / 5 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SD655
OCR Text	...ltage DC current transfer ratio Gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) hFE*1 fT Notes: 1. The 2SD655 is grouped by h FE as fo...Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 Collector Current IC (mA) 40 50 ...
Description	Silicon NPN Epitaxial npn型硅外延
File Size	28.39K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SD667 2SD667A
OCR Text	... Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD667 and 2SD667A are grouped by h FE1 as follows. 2. Pulse test B 2SD667 2SD667A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 16...
Description	Silicon NPN Epitaxial npn型硅外延 Silicon NPN Transistor
File Size	31.22K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD669 2SD669A SD669
OCR Text	... Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 1...
Description	Silicon NPN Epitaxial
File Size	35.10K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FJV3101R FJV3101RMTF
OCR Text	...i e = 0 0.1 a h fe dc current gain v ce = 5 v, i c = 10 ma 20 v ce (sat) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma 0.3 v f t current gain bandwidth product v ce = 10 v, i c = 5 ma 250 mhz c ob output capacitanc...
Description	NPN Epitaxial Silicon Transistor with Bias Resistor
File Size	162.71K / 5 Page	View it Online	Download Datasheet

For gain.collector-base Found Datasheets File :: 42436 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

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