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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF9045LR1
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| OCR Text |
...gain ? 18.8 db efficiency ? 42% imd ? ? 32 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 945 mhz, 45 watts cw output power ? excellent thermal stability... |
| Description |
RF Power Field Effect Transistors
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| File Size |
219.86K /
8 Page |
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it Online |
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Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060MBR1
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| OCR Text |
...ntermodulation distortion (dbc) imd, third order i dq = 225 ma 350 ma ?50 20.2 44 18 350 ma 225 ma v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 khz tone spacing 450 ma 550 ma 675 ma
mrf6s9060nr1 mrf6s9060nbr1 ... |
| Description |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
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| File Size |
530.35K /
16 Page |
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it Online |
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Analog Devices, Inc.
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| Part No. |
AD7278BRMJ
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| OCR Text |
...max intermodulation distortion (imd) 2 second order terms -76 db typ fa= tbd khz, fb= tbd khz third order terms -76 db typ fa= tbd khz, fb= tbd khz aperture del... |
| Description |
3MSPS,12-/10-/8-Bit ADCs in 6-Lead TSOT
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| File Size |
253.08K /
20 Page |
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it Online |
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http://
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| Part No. |
MW6IC1940NBR1
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| OCR Text |
...termodulation d istortion (dbc) imd, third order v dd =28vdc,i dq1 = 200 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 550 ma 330 ma 440 ma figure 10. third order intermodulation distortion versus output power ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
835.17K /
17 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF884PS
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| OCR Text |
... f p l(av) p l(m) g p ? d imd3 imd shldr par (mhz) (w) (w) (db) (%) (dbc) (dbc) (db) rf performance in a common source 860 mhz narrowband test circuit 2-tone, class-ab f 1 = 860; f 2 = 860.1 150 - 21 46 ? 34 - - dvb-t (8k ofdm) 858 70... |
| Description |
UHF power LDMOS transistor
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| File Size |
447.89K /
16 Page |
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it Online |
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Renesas Electronics Corporation.
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| Part No. |
RQG1003UQ-TL-E
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| OCR Text |
...ud = 1.801 ghz fundamental 3rd. imd 3rd. order intercept point (ip3) -40 -20 20 output power p out (dbm) input power p in (dbm) -30 0 -40 -20 0 20 -30 10 -10 10 -10 v ce = 2 v i c = 5 ma fd = 2.4 ghz fud = 2.401 ghz fundamental 3r... |
| Description |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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| File Size |
307.72K /
17 Page |
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it Online |
Download Datasheet |
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Renesas Electronics Corporation.
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| Part No. |
RQG1001UP-TL-E
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| OCR Text |
...ud = 1.801 ghz fundamental 3rd. imd 3rd. order intercept point (ip3) -40 -20 20 output power p out (dbm) input power p in (dbm) -30 0 -40 -20 0 20 -30 10 -10 10 -10 v ce = 2 v i c = 5 ma fd = 2.4 ghz fud = 2.401 ghz fundamental 3r... |
| Description |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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| File Size |
304.85K /
17 Page |
View
it Online |
Download Datasheet |
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