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For isb Found Datasheets File :: 3864 Search Time::0.625ms
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				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KFW4G16Q2M KFW4G16Q2M-DED6 KFG1G16Q2M-DEB6
OCR Text	...ata 2. revised typical value of isb from 50ua to 10ua 3. revised maximum value of isb from 100ua to 50ua 4. revised erase current as tbd 5. revised maximum value of tce, taa and tacc from 70ns to 76ns 6. revised vcc-io description 7. revis...
Description	FLASH MEMORY(66MHz)
File Size	1,620.51K / 125 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KFG1G16Q2M-DED6 KFG2G16Q2M-DEB6 KFG2G16Q2M-DED6 KFG4G16Q2M-DEB6 KFG4G16Q2M-DED6
OCR Text	...ata 2. revised typical value of isb from 50ua to 10ua 3. revised maximum value of isb from 100ua to 50ua 4. revised erase current as tbd 5. revised maximum value of tce, taa and tacc from 70ns to 76ns 6. revised vcc-io description 7. revis...
Description	FLASH MEMORY(66MHz)
File Size	1,595.42K / 125 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K6R4016V1C-C K6R4016V1C-I_C-P K6R4016V1C-C10 K6R4016V1C-C12 K6R4016V1C-C15 K6R4016V1C-C_C-L K6R4016V1C-I10 K6R4016V1C-I12 K6R4016V1C-I15 K6R4016V1C-I/C-P K6R4016V1C-C/C-L
OCR Text	...ers and 10ns part. Previous ICC isb isb1 10ns 12ns 200mA 70mA 20mA 15ns 195mA 20ns 190mA ICC 160mA 150mA 140mA 130mA Current isb 60mA isb1 10mA Rev. 4.0 Rev. 5.0 Add Low Power-Ver. Delete 20ns speed bin Apr. 24. 2000 Sep. ...
Description	256Kx16 Bit High Speed Static RAM(3.3V Operating)
File Size	186.82K / 11 Page	View it Online	Download Datasheet

				AMIC Technology Corporation AMICC[AMIC Technology]
Part No.	A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70S A62S8316V-70SI A62S8316-70SI
OCR Text	... - 10 - 10 mA isb isb1 VOL VOH Standby Power Supply Current Output Low Voltage Output High Voltage 2.2 0.5 10 0.4 - 2.2 0.5 15 0.4 - mA A V V PRELIMINARY (February, 2001, Version 0.0) 4 AMIC Tech...
Description	256K X 16 BIT LOW VOLTAGE CMOS SRAM 70ns; 50mA 256K x 16bit low voltage CMOS SRAM
File Size	141.06K / 15 Page	View it Online	Download Datasheet

				Rohm
Part No.	BR35H160FVM-WCE2 BR35H640FVM-WCE2 BR35H128FVM-WCE2 BR35H128FJ-WCTR BR35H128FVM-WCTR BR35H160-WC BR35H160-WC10 BR35H128F-WCE2 BR35H128F-WCTR BR35H640-WC BR35H128-WC BR35H320-WC
OCR Text	...atus register standby current isb 10 a vcc=5.5v csb=vcc, sck=si=vcc or gnd, so=open * this product is not designed for protection against radioactive rays. 7 br35h160/320-wc 8 br35h640/128- wc block d...
Description	125?/a> SPI BUS ICs BR35 Family Automotive Serial EEPROMs 125 SPI BUS ICs BR35 Family 16K X 8 SPI BUS SERIAL EEPROM, PDSO8 ROHS COMPLIANT, SOP-8 Automotive Serial EEPROMs
File Size	499.58K / 17 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation] Atmel, Corp.
Part No.	AT27BV800 AT27BV800-12JC AT27BV800-12RC AT27BV800-12TC AT27BV800-12TI AT27BV800-15TI AT27BV800-12JI AT27BV800-12RI AT27BV800-15JC AT27BV800-15JI AT27BV800-15RC AT27BV800-15RI AT27BV800-15TC
OCR Text	...e word. 6. Standby VCC current (isb) is specified with VPP = VCC . VCC > VPP will cause a slight increase in isb. 3 DC and AC Operating Conditions for Read Operation AT27BV800 -12 Com. Operating Temperature (Case) Ind. VCC Power Su...
Description	8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PDSO44 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PQCC44
File Size	260.39K / 11 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	AN930
OCR Text	...and by mode current consumption isb : without rsb isb 15 m a with rsb = 10m w isb 1 m a. in order to complete the start-up condition (i.e. at nominal frequency the loop gain has a phase angle of 0 degrees and a module greater than 1), fee...
Description	LOW POWER LOW VOLTAGE MODEM ANALOG FRONT-END STLC7550
File Size	383.74K / 27 Page	View it Online	Download Datasheet

				AMI SEMICONDUCTOR
Part No.	N04Q1618C2B N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q1618C2BX-70C N04Q1618C2BX-85C
OCR Text	...1612c2bx- 15c standby current 2 isb chip disabled v cc = 1.3v, v in = v cc or 0 50 500 na read/write current 3 icc chip enabled, i out = 0 v cc =1.3v, v in =v ih or v il 1us 0.4 0.5 ma 150ns 2 3 page mode current iccp chip enabled,...
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K6 bit POWER SAVER TECHNOLOGY
File Size	200.32K / 13 Page	View it Online	Download Datasheet

For isb Found Datasheets File :: 3864 Search Time::0.625ms
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